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P6SMB200CAHM3_A/H

Vishay Intertechnology

P6SMB200CAHM3_A/H by Vishay Intertechnology

Vishay Intertechnology P6SMB200CAHM3_A/H is a single avalanche diode with 200V breakdown voltage, 600W power dissipation, and bidirectional polarity. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and compact small outline package.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,303 parts In-Stock

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Nova Conductors

Japan . 84 parts In-Stock

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Corohmni

South Africa . 195 parts In-Stock

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$0.031

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$0.031

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Aztec Data Supply Inc.

USA . 246 parts In-Stock

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$0.069

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Ampacity Inc.

Singapore . 523 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 262 parts In-Stock

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$11.053

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,587 parts In-Stock

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Argo Parts USA

USA . 4,551 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Vishay Intertechnology presents the P6SMB200CAHM3_A/H, a high-quality Transient Suppression Device that offers reliable protection for electronic circuits. With a maximum power dissipation of 600W and a nominal breakdown voltage of 200V, this device ensures optimal performance in various applications. Designed with advanced technology and meeting AEC-Q101 standards, the P6SMB200CAHM3_A/H provides customers with peace of mind knowing their equipment is safeguarded from voltage spikes. Trust Vishay Intertechnology for superior quality and protection in every circuit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability ensures the device can handle sudden spikes in voltage effectively.

Nominal Breakdown Voltage: 200 V

Maintains a stable breakdown voltage to protect connected components from excessive voltage levels.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal leakage, enhancing the overall efficiency of the device.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to function in various environmental conditions.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and performance for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes Transient Voltage Suppressor diode technology for effective voltage clamping and protection.

Technology: AVALANCHE

Avalanche technology enables the device to handle high energy transient events without degradation.

Polarity: BIDIRECTIONAL

Bidirectional protection allows the device to protect against voltage surges in both directions.

Technical Specifications

Transient Suppression Devices P6SMB200CAHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

210 V

Minimum Breakdown Voltage:

190 V

Nominal Breakdown Voltage:

200 V

Maximum Clamping Voltage:

274 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

171 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

171 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMB200CAHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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