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P6SMB10CA-M3/5B

Vishay Intertechnology

P6SMB10CA-M3/5B by Vishay Intertechnology

Vishay Intertechnology P6SMB10CA-M3/5B is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 10V Breakdown Voltage. It operates b/w -65 to 150 °C and has a Max Clamping Voltage of 14.5V. Ideal for transient suppression in electronic circuits requiring bidirectional protection.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,214 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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13,214

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Nova Conductors

Japan . 33 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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33

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,328 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

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10k+ parts

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1,328

$1.010

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AZTECH Wire

Italy . 888 parts In-Stock

1+ parts

$10.416

100+ parts

-

1k+ parts

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10k+ parts

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888

$10.416

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Aranea Global

USA . 500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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500

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Overview

Vishay Intertechnology presents the P6SMB10CA-M3/5B, a high-quality transient suppression device that offers superior protection against voltage spikes and surges. With a maximum power dissipation of 600W and a nominal breakdown voltage of 10V, this product guarantees reliable performance in various applications. The small outline package design and matte tin terminal finish make installation easy, while the bidirectional polarity ensures versatile use. Trust Vishay Intertechnology for top-notch technology and unparalleled quality in transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material offers excellent durability and protection for the device, ensuring it can withstand harsh environments and handling.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high maximum power dissipation capability, this device can effectively handle transient overvoltage events without getting damaged, providing reliable protection for the connected circuits.

Nominal Breakdown Voltage: 10 V

The nominal breakdown voltage of 10 V ensures that the device activates at the specified voltage level, providing precise protection against voltage spikes and surges.

Maximum Reverse Current: 20 uA

The low maximum reverse current ensures minimal leakage and power loss in normal operating conditions, increasing the efficiency of the device.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this device can function effectively in a wide range of temperature environments, making it suitable for various applications.

Technical Specifications

Transient Suppression Devices P6SMB10CA-M3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

10 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

8.55 V

Maximum Reverse Current:

20 uA

Reverse Test Voltage:

8.55 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMB10CA-M3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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