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KBP10M-E4/51

Vishay Intertechnology

KBP10M-E4/51 by Vishay Intertechnology

Vishay Intertechnology's KBP10M-E4/51 is a bridge rectifier diode with 4 elements, SILICON material, and 1000V breakdown voltage. It operates b/w -55°C to 150°C, has a max output current of 1.5A, and forward voltage of 1V. Ideal for applications requiring high-voltage rectification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,867 parts In-Stock

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5,867

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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2,000

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ComSIT USA

USA . 1,200 parts In-Stock

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1,200

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Nova Conductors

Japan . 68 parts In-Stock

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68

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Distributors (Availability)

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Ampacity Inc.

Singapore . 130 parts In-Stock

1+ parts

$2.010

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130

$2.010

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AZTECH Wire

Italy . 323 parts In-Stock

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$7.591

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323

$7.591

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Component Stockers USA

USA . 204 parts In-Stock

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$99.990

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204

$99.990

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Aranea Global

USA . 500 parts In-Stock

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500

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Perfect Parts

USA . 177 parts In-Stock

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177

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Overview

Discover the KBP10M-E4/51 by Vishay Intertechnology, a top-quality bridge rectifier diode designed to deliver reliable performance in a variety of applications. With a durable plastic/epoxy package and UL recognition, this product offers outstanding value and benefits to customers seeking a robust solution for their electrical needs. Whether you're looking to upgrade your power supply or enhance your circuit design, the KBP10M-E4/51 is the ideal choice for ensuring smooth operation and long-lasting durability. Choose Vishay Intertechnology for superior quality and performance in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this bridge rectifier diode can withstand heat and operate efficiently in demanding environments.

Minimum Breakdown Voltage: 1000 V

The high minimum breakdown voltage of 1000V ensures protection against voltage spikes and surges, making it suitable for industrial applications.

Maximum Output Current: 1.5 A

The maximum output current of 1.5A allows for reliable performance in various circuits and applications.

Maximum Non Repetitive Peak Forward Current: 60 A

The high maximum non-repetitive peak forward current rating of 60A ensures the diode can handle sudden current spikes without damage.

Technical Specifications

Bridge Rectifier Diodes KBP10M-E4/51 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

1000 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

SILVER

Terminal Form:

Terminal Position:

Trade Compliance

KBP10M-E4/51 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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