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GBPC1201W-E4/51

Vishay Intertechnology

GBPC1201W-E4/51 by Vishay Intertechnology

Vishay Intertechnology's GBPC1201W-E4/51 is a bridge rectifier diode with 4 elements, max output current of 12A, and max reverse voltage of 100V. Ideal for applications requiring high efficiency power conversion in electronic circuits. Operates b/w -55°C to 150°C temperature range.

Median Price

$1.621

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 86 parts In-Stock

1+ parts

$0.556

100+ parts

$0.551

1k+ parts

-

10k+ parts

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86

$0.556

$0.551

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Avnet

USA . 6,300 parts In-Stock

1+ parts

$2.686

100+ parts

$2.549

1k+ parts

-

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-

6,300

$2.686

$2.549

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Chip1Stop

Japan . 86 parts In-Stock

1+ parts

$3.180

100+ parts

-

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86

$3.180

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Verical

USA . 86 parts In-Stock

1+ parts

-

100+ parts

$0.551

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86

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$0.551

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 33 parts In-Stock

1+ parts

$2.971

100+ parts

-

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33

$2.971

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IBS Electronics

USA . 2,900 parts In-Stock

1+ parts

-

100+ parts

$2.637

1k+ parts

$2.567

10k+ parts

$2.202

2,900

-

$2.637

$2.567

$2.202

NAC Semi

USA . 2,300 parts In-Stock

1+ parts

-

100+ parts

$4.180

1k+ parts

-

10k+ parts

$3.760

2,300

-

$4.180

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$3.760

Vyrian

USA . 1,886 parts In-Stock

1+ parts

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1,886

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,275 parts In-Stock

1+ parts

$0.468

100+ parts

-

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1,275

$0.468

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Semicontronic

India . 1,998 parts In-Stock

1+ parts

$0.471

100+ parts

$0.459

1k+ parts

$0.457

10k+ parts

-

1,998

$0.471

$0.459

$0.457

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Continental Prestige Electronics

USA . 6,595 parts In-Stock

1+ parts

$2.971

100+ parts

-

1k+ parts

-

10k+ parts

$2.912

6,595

$2.971

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-

$2.912

Argo Parts USA

USA . 4,573 parts In-Stock

1+ parts

$2.971

100+ parts

-

1k+ parts

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10k+ parts

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4,573

$2.971

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Netroflash

USA . 100 parts In-Stock

1+ parts

$2.971

100+ parts

$2.912

1k+ parts

-

10k+ parts

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100

$2.971

$2.912

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Microchip USA

USA . 8,561 parts In-Stock

1+ parts

$14.840

100+ parts

$14.630

1k+ parts

$14.520

10k+ parts

$14.420

8,561

$14.840

$14.630

$14.520

$14.420

QUARKTWIN TECHNOLOGY LTD

USA . 13,204 parts In-Stock

1+ parts

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13,204

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Overview

Experience superior performance and reliability with the GBPC1201W-E4/51 Bridge Rectifier Diode by Vishay Intertechnology. Crafted from high-quality materials and built to last, this product offers seamless operation in a variety of applications. Whether you're looking to upgrade your electronics or enhance your industrial equipment, this bridge rectifier diode delivers exceptional value, efficiency, and peace of mind. Trust Vishay Intertechnology to provide the best solutions for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves efficiency.

Terminal Finish: SILVER

Silver terminals offer excellent conductivity and resist corrosion, enhancing performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Minimum Breakdown Voltage: 100 V

High breakdown voltage ensures reliable operation and protection against voltage spikes.

Maximum Output Current: 12 A

Capable of handling high current loads, making it suitable for a variety of applications.

Maximum Non Repetitive Peak Forward Current: 200 A

Can withstand high peak currents, providing robust performance in transient conditions.

Technical Specifications

Bridge Rectifier Diodes GBPC1201W-E4/51 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

100 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

S-PUFM-W4

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

100 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

SILVER

Terminal Form:

Terminal Position:

Trade Compliance

GBPC1201W-E4/51 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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