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BZG05C3V9-E3-TR3

Vishay Intertechnology

BZG05C3V9-E3-TR3 by Vishay Intertechnology

Vishay Intertechnology's BZG05C3V9-E3-TR3 Zener Diode has a nominal reference voltage of 3.9V, with a max power dissipation of 1.25W and operating temperature up to 150°C. Ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,065 parts In-Stock

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VNN

France . 1,853 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Semicontronic

India . 408 parts In-Stock

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$0.010

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$0.010

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408

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Ampacity Inc.

Singapore . 922 parts In-Stock

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$2.010

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922

$2.010

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AZTECH Wire

Italy . 275 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,728 parts In-Stock

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Continental Prestige Electronics

USA . 5,933 parts In-Stock

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Argo Parts USA

USA . 1,998 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock a world of precision and reliability with the BZG05C3V9-E3-TR3 Zener Diode from Vishay Intertechnology. Crafted with the highest quality materials, this single-configured diode offers unparalleled performance in a compact package. Ideal for a wide range of applications, this Zener diode guarantees precise voltage regulation and protection in your electronic circuits. Trust Vishay Intertechnology to deliver innovative solutions that exceed expectations. Choose the BZG05C3V9-E3-TR3 for unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments.

Working Test Current: 60 mA

Allows for reliable and efficient performance within a safe current range.

Surface Mount: YES

Easily mountable on PCBs for convenient installation and space-saving designs.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance in challenging conditions.

Maximum Power Dissipation: 1.25 W

Capable of handling power dissipation effectively, enhancing the diode's reliability.

Nominal Reference Voltage: 3.9 V

Provides a stable reference voltage for regulating circuits and ensuring consistent performance.

Technology: ZENER

Utilizes Zener technology for precise voltage regulation and protection against voltage spikes.

Technical Specifications

Zener Diodes BZG05C3V9-E3-TR3 attributes and parameters. Explore more Zener Diodes devices from Vishay Intertechnology

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.25 W

Nominal Reference Voltage:

3.9 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.13 %

Working Test Current:

60 mA

Trade Compliance

BZG05C3V9-E3-TR3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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