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BAW56-HE3-08

Vishay Intertechnology

BAW56-HE3-08 by Vishay Intertechnology

Vishay Intertechnology's BAW56-HE3-08 is a common anode diode with 2 elements, featuring a max reverse recovery time of 0.006 us. Ideal for rectification applications, it has a max output current of 0.25 A and can handle up to 70 V peak reverse voltage. This small outline diode operates b/w -55 to 150 °C, making it suitable for various electronic circuits.

Median Price

$0.137

Lifecycle Status

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8

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1k+

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Adafruit Industries

USA . 100 parts In-Stock

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$0.044

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$0.040

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$0.036

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$0.044

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Mouser Electronics

USA . 30,000 parts In-Stock

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$0.230

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$0.097

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$0.050

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$0.036

30,000

$0.230

$0.097

$0.050

$0.036

Arrow

USA . 30,000 parts In-Stock

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Verical

USA . 30,000 parts In-Stock

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Nova Conductors

Japan . 63 parts In-Stock

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Vyrian

USA . 3,474 parts In-Stock

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VNN

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Contempo Components LLC

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Semicontronic

India . 19,568 parts In-Stock

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$0.037

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$0.036

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$0.036

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19,568

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$0.036

$0.036

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Ampacity Inc.

Singapore . 19,398 parts In-Stock

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$0.037

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$0.037

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.044

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$0.036

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Continental Prestige Electronics

USA . 6,709 parts In-Stock

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Argo Parts USA

USA . 4,446 parts In-Stock

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$0.047

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Corohmni

South Africa . 216 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,256 parts In-Stock

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$0.158

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Component Stockers USA

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Kepictronics

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GreenTree Electronics

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Glotronic Ltd.

UK . 21,600 parts In-Stock

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Authorized Procurement Solutions

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Netroflash

USA . 1,000 parts In-Stock

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$0.046

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$0.043

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Robosynatics

Brazil . 200 parts In-Stock

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$1.409

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Lucentia Tech

USA . 200 parts In-Stock

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$1.409

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$1.409

Overview

Discover the high-quality BAW56-HE3-08 diode by Vishay Intertechnology, designed for efficient rectification in a wide range of applications. With a common anode configuration and fast reverse recovery time, this diode offers reliable performance in a compact, surface-mount package. Whether you're working on automotive electronics or industrial controls, this Vishay product delivers exceptional value, precision, and durability. Upgrade your designs with the BAW56-HE3-08 diode and experience the advantages of top-tier technology from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as package body material makes the product lightweight and durable, ensuring easy handling and long-lasting performance.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient current flow and simplifies circuit design, making it suitable for various applications.

Surface Mount: YES

Being surface mountable, this diode offers easy installation on PCBs, saving space and facilitating automated assembly processes.

Maximum Reverse Recovery Time: 0.006 us

With a fast reverse recovery time of 0.006 us, this diode efficiently switches off in reverse bias, reducing power losses and enhancing overall circuit performance.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, making it ideal for applications where space is limited.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and flexible circuit configurations, enabling versatile use in different electronic systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a space-saving solution for compact electronic devices without compromising on performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand elevated temperatures, ensuring reliable operation in various environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows this diode to function effectively even in cold environments, offering consistent performance under different temperature conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring stable electrical connections for long-term usage.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and simplifies connection arrangements, making it convenient for various electronic applications.

Maximum Power Dissipation: 0.35 W

With a maximum power dissipation of 0.35 W, this diode can handle high power levels efficiently, preventing overheating and ensuring reliability in demanding conditions.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this diode suitable for automotive applications where robust performance is essential.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed for converting AC to DC efficiently, making it suitable for power supply and rectification applications.

Maximum Output Current: 0.25 A

With a maximum output current of 0.25 A, this diode can handle moderate current levels with ease, providing reliable performance in various electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form enhances solder joint reliability and mechanical strength, ensuring secure connections and durability in challenging operating conditions.

No. of Elements: 2

Having 2 elements allows for more efficient current handling and improved overall performance, making this diode a reliable choice for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 70 V

With a maximum repetitive peak reverse voltage of 70 V, this diode can safely handle reverse voltage spikes, ensuring protection against voltage surges and transients in the circuit.

Maximum Non Repetitive Peak Forward Current: 2 A

The diode's ability to withstand a maximum non-repetitive peak forward current of 2 A ensures reliable performance under transient conditions and protects the circuit from overcurrent events.

Diode Element Material: SILICON

Made of silicon, the diode element material offers excellent electrical properties, high temperature tolerance, and reliability, ensuring stable performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers BAW56-HE3-08 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Case Connection:

UNSPECIFIED

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.35 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Recovery Time:

.006 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAW56-HE3-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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