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BAV103-GS18

Vishay Intertechnology

BAV103-GS18 by Vishay Intertechnology

BAV103-GS18 by Vishay Intertechnology is a single diode rectifier with a max reverse recovery time of 0.05 us and a max reverse current of 15 uA. It is designed for high voltage applications, with a min breakdown voltage of 250 V and a max operating temperature of 175 °C.

Median Price

$0.034

Lifecycle Status

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30

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1k+

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Arrow

USA . 1,371 parts In-Stock

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$0.041

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Newark

USA . 1,096 parts In-Stock

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Mouser Electronics

USA . 124,640 parts In-Stock

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DigiKey

USA . 19,547 parts In-Stock

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EBV Elektronik

Germany . 8,570,000 parts In-Stock

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Chip1Stop

Japan . 220,000 parts In-Stock

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TTI Europe

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Future Electronics

Canada . 10,000 parts In-Stock

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Farnell

UK . 5,620 parts In-Stock

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Element14

Singapore . 5,620 parts In-Stock

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$0.081

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Verical

USA . 1,371 parts In-Stock

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Nova Conductors

Japan . 139 parts In-Stock

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Bristol Electronics

USA . 14,130 parts In-Stock

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NAC Semi

USA . 7,060,000 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

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Rutronik

Germany . 40,000 parts In-Stock

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Chip Stock

USA . 23,500 parts In-Stock

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Pegasus Components GmbH

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Dan-Mar Components

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ECAB

Sweden . 13,000 parts In-Stock

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R&J Components

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ACDS - Activité Composants Distribution Service

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IBS Electronics

USA . 10,000 parts In-Stock

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VNN

France . 9,071 parts In-Stock

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Rebound Electronics

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Inventory MP

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Holdelec - ElecDif-Pro

France . 2,275 parts In-Stock

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LIBRA Elektronik GmbH

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Prism Electronics

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Semicontronic

India . 646,562 parts In-Stock

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Component Stockers USA

USA . 122,260 parts In-Stock

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Ampacity Inc.

Singapore . 674,286 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,014 parts In-Stock

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Continental Prestige Electronics

USA . 12,464 parts In-Stock

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Argo Parts USA

USA . 1,773 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Corohmni

South Africa . 267 parts In-Stock

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Eastek

USA . 7,350,000 parts In-Stock

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Perfect Parts

USA . 910,776 parts In-Stock

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Glotronic Ltd.

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Authorized Procurement Solutions

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

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Netroflash

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Allen Electronics Distributors

USA . 100 parts In-Stock

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$0.079

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$0.052

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$0.032

100

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$0.032

Overview

Discover the BAV103-GS18 by Vishay Intertechnology, a high-quality diode that brings unmatched performance and reliability to your projects. As a leading manufacturer in the industry, Vishay Intertechnology is known for its commitment to excellence and innovation. The BAV103-GS18 is designed to meet the demands of high voltage applications with its impressive features and benefits. With a maximum reverse recovery time of 0.05 us and a minimum breakdown voltage of 250 V, this diode offers exceptional efficiency and durability. Its compact and surface mount design makes it convenient for various installations. Trust Vishay Intertechnology's BAV103-GS18 for all your high voltage needs and experience the value it brings to your projects.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package body material provides excellent thermal conductivity and high resistance to mechanical stress, making this diode suitable for high voltage applications.

Config: SINGLE

The single configuration simplifies circuit designs and reduces component count, making it convenient to use in various electronic applications.

Surface Mount: YES

The surface mount capability allows for easy integration onto PCBs, saving space and enabling efficient assembly processes.

Maximum Reverse Recovery Time: 0.05 us

The extremely fast reverse recovery time ensures efficient switching and minimal power losses, making this diode ideal for high-speed rectification applications.

Maximum Reverse Current: 15 uA

The low reverse current rating ensures low power dissipation and high efficiency, making it suitable for energy-efficient designs.

Package Shape: ROUND

The round package shape provides mechanical strength and ease of handling during assembly, making it suitable for robust industrial environments.

Reverse Test Voltage: 200 V

The high reverse test voltage withstand capability ensures reliable performance and protection against voltage spikes.

No. of Terminals: 2

The two-terminal configuration simplifies circuit connections and reduces complexity in circuit designs, making it easy to use for both hobbyists and professionals.

Package Style (Meter): LONG FORM

The long form package style offers a larger surface area for heat dissipation, enhancing the diode's reliability and allowing for operation at high temperatures.

Application: HIGH VOLTAGE

The diode is designed specifically for high voltage applications, making it a reliable choice when dealing with high electrical potentials.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and maintain stable performance.

Terminal Finish: Tin/Silver (Sn97.5Ag2.5)

The tin/silver terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term durability.

Terminal Position: END

The end terminal position simplifies mounting and ensures proper alignment during assembly, helping to eliminate errors and improve manufacturing efficiency.

Case Connection: ISOLATED

The isolated case connection provides electrical insulation, preventing leakage currents and improving safety in high voltage applications.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation capability allows for reliable operation without the risk of overheating, ensuring long-term reliability.

Minimum Breakdown Voltage: 250 V

The high minimum breakdown voltage enables the diode to handle high voltage transients and provide robust protection against overvoltage conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The diode can withstand a peak reflow temperature of 260°C for up to 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

The diode can withstand a peak reflow temperature of 260°C, allowing for high-temperature assembly processes without affecting its performance.

Diode Type: RECTIFIER DIODE

The rectifier diode type allows for efficient conversion of AC to DC, making it suitable for rectification and power supply applications.

Maximum Forward Voltage (VF): 1 V

The low maximum forward voltage drop minimizes power losses and improves overall energy efficiency, making it suitable for low-power applications.

Maximum Output Current: 0.25 A

With a maximum output current of 0.25 A, this diode can handle moderate power loads, making it suitable for small to medium-sized electrical circuits.

Terminal Form: WRAP AROUND

The wrap-around terminal form simplifies the soldering process and ensures secure connections, improving the overall reliability of the circuit.

No. of Elements: 1

The single element design simplifies circuit layouts and reduces complexity, making it suitable for compact and space-constrained applications.

Maximum Repetitive Peak Reverse Voltage: 250 V

The high maximum repetitive peak reverse voltage rating ensures reliable operation even under high-voltage conditions, making it suitable for demanding applications.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this diode can be safely stored and used in various environmental conditions without the risk of moisture-related damage.

No. of Phases: 1

The single-phase design simplifies circuit configurations and improves compatibility with other components, making it suitable for a wide range of electronic systems.

Maximum Non Repetitive Peak Forward Current: 1 A

With a high maximum non-repetitive peak forward current rating, this diode can handle short-duration high current surges, ensuring reliable operation even in demanding conditions.

Diode Element Material: SILICON

The silicon diode element offers high efficiency, low forward voltage drop, and excellent temperature stability, making it one of the most commonly used diode materials.

Technical Specifications

Diodes & Rectifiers BAV103-GS18 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Application:

HIGH VOLTAGE

Minimum Breakdown Voltage:

250 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

.25 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

250 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

200 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Silver (Sn97.5Ag2.5)

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV103-GS18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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