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2KBP10M-E4/51

Vishay Intertechnology

2KBP10M-E4/51 by Vishay Intertechnology

The Vishay Intertechnology 2KBP10M-E4/51 is a bridge rectifier diode with 4 elements, max output current of 2A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and industrial equipment due to its UL recognized reference standard. Operating temperature ranges from -55°C to 165°C making it suitable for various environments.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Ampacity Inc.

Singapore . 1,576 parts In-Stock

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AZTECH Wire

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Continental Prestige Electronics

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Overview

Enhance your electronic projects with the Vishay Intertechnology 2KBP10M-E4/51 Bridge Rectifier Diode. Manufactured by a trusted industry leader, this diode offers reliable performance and durability. Ideal for a variety of applications, this diode provides efficient rectification of AC voltage to DC, ensuring smooth operation of your circuits. Experience the value and benefits of Vishay Intertechnology's top-quality components with the 2KBP10M-E4/51 Bridge Rectifier Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the diodes, making them suitable for various environments and applications.

Maximum Operating Temperature: 165 °C

With a high maximum operating temperature, these diodes can withstand heat and operate efficiently in demanding conditions.

Minimum Breakdown Voltage: 1000 V

The high minimum breakdown voltage ensures reliable performance and protection against voltage spikes or surges in the circuit.

Maximum Output Current: 2 A

The maximum output current of 2A allows these diodes to handle moderate to high current loads, making them suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high repetitive peak reverse voltage rating ensures that the diodes can handle reverse voltage without breakdown, offering protection to the circuit.

Technical Specifications

Bridge Rectifier Diodes 2KBP10M-E4/51 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

1000 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

165 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

SILVER

Terminal Form:

Terminal Position:

Trade Compliance

2KBP10M-E4/51 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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