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2KBP01M-E4/51

Vishay Intertechnology

2KBP01M-E4/51 by Vishay Intertechnology

Vishay Intertechnology's 2KBP01M-E4/51 is a bridge rectifier diode with 4 elements, SILICON material, and 100V breakdown voltage. It operates b/w -55°C to 165°C, has a max output current of 2A, and VF of 1.1V. Ideal for applications requiring UL RECOGNIZED components in IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,563 parts In-Stock

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VNN

France . 2,711 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 164 parts In-Stock

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$0.010

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$0.010

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Corohmni

South Africa . 159 parts In-Stock

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$0.136

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159

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AZTECH Wire

Italy . 648 parts In-Stock

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$15.890

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QUARKTWIN TECHNOLOGY LTD

USA . 27,721 parts In-Stock

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Glotronic Ltd.

UK . 3,140 parts In-Stock

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Perfect Parts

USA . 2,691 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,651 parts In-Stock

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Argo Parts USA

USA . 684 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality 2KBP01M-E4/51 Bridge Rectifier Diodes from Vishay Intertechnology. Designed for durability and performance, these diodes offer reliable power conversion in a compact package. Whether you're working on industrial equipment, consumer electronics, or automotive applications, these diodes provide efficient energy conversion and long-term reliability. Trust Vishay Intertechnology to deliver top-notch components for all your electronic needs. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to external factors, making this product suitable for various environments.

Maximum Operating Temperature: 165 °C

With a high maximum operating temperature, this bridge rectifier diode can withstand heat without losing efficiency or performance.

Minimum Breakdown Voltage: 100 V

The high minimum breakdown voltage ensures reliability and protection against voltage spikes or surges, making it a safe choice for electronic circuits.

Maximum Output Current: 2 A

The high maximum output current allows for efficient power conversion and handling, making this diode suitable for various applications.

Maximum Non Repetitive Peak Forward Current: 60 A

The high maximum non repetitive peak forward current ensures the diode can handle sudden surges in current without damage, making it reliable in demanding situations.

Technical Specifications

Bridge Rectifier Diodes 2KBP01M-E4/51 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

100 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

165 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

SILVER

Terminal Form:

Terminal Position:

Trade Compliance

2KBP01M-E4/51 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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