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SSM3J133TU(TE85L)

Toshiba

SSM3J133TU(TE85L) by Toshiba

Toshiba's SSM3J133TU(TE85L) is a P-CHANNEL FET with 5.5A max drain current and 0.5W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or battery-operated devices. Operating in enhancement mode, it offers reliable performance up to 150°C.

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Overview

Discover the exceptional quality and reliability of the SSM3J133TU(TE85L) P-CHANNEL transistor by Toshiba. This versatile component is perfect for a wide range of applications, offering enhanced performance and durability. With a maximum drain current of 5.5 A and maximum power dissipation of 0.5 W, this enhancement mode transistor provides unmatched value and benefits to customers. Trust Toshiba's cutting-edge technology to deliver superior results in your projects.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors have a higher mobility of charge carriers compared to N-CHANNEL transistors, providing faster switching speeds and lower ON-state resistance.

Configuration: SINGLE

SINGLE configuration transistors are simpler to use and control compared to multiple configurations, making them ideal for straightforward applications.

Surface Mount: YES

Surface mount transistors are easier to integrate onto a circuit board, saving space and improving overall layout efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require a positive voltage at the gate to turn ON, offering better control and protection against accidental activation.

Maximum Drain Current (Abs) (ID): 5.5 A

A high maximum drain current allows the transistor to handle larger loads and currents without overheating or damage, making it versatile for various applications.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels efficiently, ensuring reliable performance under normal operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor (MOS) technology provides high input impedance, low power consumption, and fast operation, making it suitable for numerous electronic applications.

Maximum Operating Temperature: 150 °C

The transistor can operate at temperatures up to 150°C, ensuring stability and reliability even in demanding environments where high temperatures may be encountered.

Technical Specifications

Other Function Transistors SSM3J133TU(TE85L) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.5 A

Maximum Drain Current (ID):

5.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

SSM3J133TU(TE85L) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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