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RN2602(TE85L)

Toshiba

RN2602(TE85L) by Toshiba

Toshiba's RN2602(TE85L) is a PNP BJT with 2 elements, built-in resistor, and hFE of 50. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features Gull Wing terminals in a small outline package suitable for surface mount technology.

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Overview

Upgrade your electronic projects with the Toshiba RN2602(TE85L) Small Signal Bipolar Junction Transistor. Manufactured by Toshiba, this PNP transistor offers high quality and reliability for your switching applications. With its built-in resistor and small outline package style, this transistor is perfect for compact designs. Experience smooth and efficient performance with a maximum collector-emitter voltage of 50V and a nominal transition frequency of 200MHz. Trust in Toshiba's reputation for excellence and elevate your projects with the RN2602(TE85L) transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package is cost-effective, durable and allows for easy handling and mounting.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product suitable for such scenarios.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and allows for easy integration, saving time and effort in setup.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient on/off behavior and reliable performance in switching circuits.

Surface Mount: YES

Suitable for surface mount technology, enabling compact and space-efficient PCB designs.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and are ideal for high-reliability applications.

No. of Elements: 2

Having 2 elements allows for increased functionality and flexibility in circuit design.

No. of Terminals: 6

With 6 terminals, this transistor offers versatile connectivity options for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

Small outline package is space-saving and ideal for compact electronic devices where size is a constraint.

Minimum DC Current Gain (hFE): 50

A higher minimum DC current gain ensures consistent and stable amplifier performance.

Maximum Collector-Emitter Voltage: 50 V

Operates safely under 50V, suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance in electronic components.

Maximum Collector Current (IC): 0.1 A

Can handle a maximum collector current of 0.1 A, suitable for low power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and connection options.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency, this transistor is capable of handling high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN2602(TE85L) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

RN2602(TE85L) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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