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HN1C03FU-B(TE85L,F)

Toshiba

HN1C03FU-B(TE85L,F) by Toshiba

Toshiba's HN1C03FU-B(TE85L,F) NPN transistor offers a max power dissipation of 0.2W, min DC current gain of 200, and max collector current of 0.3A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

Median Price

$0.333

Lifecycle Status

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4

In-Stock Inventory

1k+

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Mouser Electronics

USA . 6,000 parts In-Stock

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$0.570

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$0.236

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$0.151

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$0.109

6,000

$0.570

$0.236

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$0.109

Arrow

USA . 6,000 parts In-Stock

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$0.096

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$0.096

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TME

Poland . 6,000 parts In-Stock

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$0.119

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$0.119

Nova Conductors

Japan . 37 parts In-Stock

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37

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Ampacity Inc.

Singapore . 3,662 parts In-Stock

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$0.082

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$0.082

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Corohmni

South Africa . 133 parts In-Stock

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$1.036

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$1.036

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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4,800

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Continental Prestige Electronics

USA . 2,471 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

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Overview

Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and compatible with a wide range of circuits.

Configuration: SINGLE

Single configuration makes the transistor easy to integrate into circuits and simplifies circuit design.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, making this product suitable for space-constrained applications.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels, ensuring reliable performance in various applications.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 indicates good amplification capability, making this transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, enhancing reliability in harsh conditions.

Maximum Collector Current (IC): 0.3 A

A maximum collector current of 0.3A allows this transistor to handle relatively high currents, making it suitable for power switching applications.

Technical Specifications

Other Function Transistors HN1C03FU-B(TE85L,F) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

HN1C03FU-B(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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