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DF2S6.8FS

Toshiba

DF2S6.8FS by Toshiba

DF2S6.8FS by Toshiba is a Zener diode with 6.8V breakdown voltage, 0.5uA reverse current, and 9V clamping voltage. Ideal for transient suppression in electronics due to its unidirectional polarity and small outline package style. Meets IEC-61000-4-2, 4-5 standards for reliable performance at up to 150°C operating temperature.

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Overview

Enhance your electronic devices with the Toshiba DF2S6.8FS Transient Suppression Device. Manufactured by Toshiba, a trusted name in the industry, this product offers unparalleled quality and reliability. Ideal for protecting sensitive circuits from voltage spikes, this device ensures optimal performance and peace of mind. With a nominal breakdown voltage of 6.8V and maximum clamping voltage of 9V, the DF2S6.8FS is a must-have for any application requiring robust transient voltage protection. Trust Toshiba to deliver superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, ensuring the device can withstand various environmental conditions.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving time and effort.

Nominal Breakdown Voltage: 6.8 V

The specific breakdown voltage ensures that the device activates at the right threshold, providing reliable protection.

Maximum Reverse Current: 0.5 uA

Low reverse current indicates minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and integration within electronic systems.

Reverse Test Voltage: 5 V

The reverse test voltage ensures the device is properly calibrated and functioning within specified limits.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with international standards ensures the device meets quality and safety requirements.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient suppression, offering effective protection against voltage spikes.

Maximum Clamping Voltage: 9 V

The maximum clamping voltage limits the voltage spikes to a safe level, preventing damage to sensitive electronic components.

Technical Specifications

Transient Suppression Devices DF2S6.8FS attributes and parameters. Explore more Transient Suppression Devices devices from Toshiba

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.4 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

DF2S6.8FS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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