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DF2B20M4SL,L3F(B

Toshiba

DF2B20M4SL,L3F(B by Toshiba

Toshiba's DF2B20M4SL,L3F(B is a single avalanche diode with bidirectional polarity. It has a max clamping voltage of 30V and breakdown voltage of 22.5V, suitable for transient suppression in electronics. With a package style of small outline and surface mount capability, it operates at temperatures up to 150°C.

Median Price

$0.197

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Overview

Experience the superior quality and reliability of Toshiba with the DF2B20M4SL,L3F(B transient suppression device. This single-configured, surface-mount diode offers maximum protection against voltage spikes, making it ideal for a wide range of applications. With a nominal breakdown voltage of 22.5V and a maximum clamping voltage of 30V, this diode ensures your sensitive electronics remain safe from potential damage. Trust in Toshiba's expertise in technology and innovation to provide you with the best solution for your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the device, ensuring a longer lifespan.

Config: SINGLE

Single configuration simplifies installation and maintenance, making it user-friendly.

Surface Mount: YES

Surface mount capability allows for easy and efficient mounting on circuit boards.

Maximum Non-Repetitive Peak Reverse Power Dissipation: 15 W

High power dissipation capacity makes this device suitable for handling transient surges effectively.

Nominal Breakdown Voltage: 22.5 V

Proper breakdown voltage ensures reliable protection against overvoltage events.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving integration into electronic circuits.

Reverse Test Voltage: 18.5 V

Proper reverse test voltage rating ensures accurate performance under reverse polarity conditions.

No. of Terminals: 2

Simplified two-terminal design facilitates easy connection and installation in circuitry.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables more efficient PCB layout.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures reliability in various environmental conditions.

Terminal Position: DUAL

Dual terminal position allows for flexible and versatile mounting options in electronic circuits.

Minimum Breakdown Voltage: 19.5 V

Minimum breakdown voltage specification ensures consistent protection against transient surges.

Maximum Breakdown Voltage: 26 V

High maximum breakdown voltage provides protection against a wide range of overvoltage conditions.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with international standards ensures the reliability and effectiveness of the device in transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Diode type specifically designed for transient voltage suppression ensures efficient protection against voltage spikes.

Technology: AVALANCHE

Avalanche technology offers fast response time and high-power handling capabilities for effective transient suppression.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and reduces environmental impact.

Maximum Repetitive Peak Reverse Voltage: 18.5 V

High maximum repetitive peak reverse voltage provides effective protection against repeated transient events.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection against both positive and negative voltage spikes.

Maximum Clamping Voltage: 30 V

High maximum clamping voltage ensures that the device can handle transient surges without damaging connected equipment.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices DF2B20M4SL,L3F(B attributes and parameters. Explore more Transient Suppression Devices devices from Toshiba

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

26 V

Minimum Breakdown Voltage:

19.5 V

Nominal Breakdown Voltage:

22.5 V

Maximum Clamping Voltage:

30 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N2

Maximum Non Repetitive Peak Reverse Power Dissipation:

15 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

18.5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

18.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

DF2B20M4SL,L3F(B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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