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HS1MLR3G

Taiwan Semiconductor

HS1MLR3G by Taiwan Semiconductor

HS1MLR3G by Taiwan Semiconductor is a single rectifier diode with a max reverse recovery time of 0.075 us and max forward voltage of 1.7 V. It is used for efficiency applications, operating b/w -55 to 150 °C, with a breakdown voltage of 1000 V.

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AZTECH Wire

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Overview

Unlock the power of efficiency with the HS1MLR3G by Taiwan Semiconductor. Known for their high-quality diodes and rectifiers, Taiwan Semiconductor delivers reliable products that are designed to perform. The HS1MLR3G is a single-config surface mount diode with a maximum operating temperature of 150°C, making it ideal for a wide range of applications where efficiency is key. With a minimum breakdown voltage of 1000 V and maximum output current of 1 A, this diode offers unparalleled value and benefits to customers looking for top-notch performance in a compact package. Choose Taiwan Semiconductor for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diode inside, ensuring reliable performance.

Config: SINGLE

Single configuration makes it easy to use and integrate into various circuit designs.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, saving space and improving reliability.

Maximum Reverse Recovery Time: 0.075 us

Fast reverse recovery time ensures efficient operation and minimal power loss in diode applications.

Maximum Reverse Current: 5 uA

Low reverse current helps in reducing power consumption and improving overall efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and integration into electronic devices.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and enhances the overall usability of the diode.

Application: EFFICIENCY

Specifically designed for efficiency-related applications, ensuring optimal performance in power management circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for safe operation in various environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range ensures consistent performance even in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and installation.

Minimum Breakdown Voltage: 1000 V

High breakdown voltage ensures protection against voltage spikes and overloads.

Maximum Forward Voltage (VF): 1.7 V

Low forward voltage drop ensures minimal power loss and better efficiency in circuit applications.

Maximum Output Current: 1 A

High output current rating allows for reliable operation in various power supply applications.

Terminal Form: FLAT

Flat terminal form simplifies the connection process and enhances the overall usability of the diode.

Maximum Repetitive Peak Reverse Voltage: 1000 V

High reverse voltage rating ensures reliability and protection in high voltage circuits.

Maximum Non Repetitive Peak Forward Current: 30 A

High peak forward current capability allows for reliable operation in high current applications.

Diode Element Material: SILICON

Silicon material provides good electrical properties and reliability for diode operation.

Technical Specifications

Diodes & Rectifiers HS1MLR3G attributes and parameters. Explore more Diodes & Rectifiers devices from Taiwan Semiconductor

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Minimum Breakdown Voltage:

1000 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

HS1MLR3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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