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LND150N8

Supertex

LND150N8 by Supertex

Supertex LND150N8 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max power dissipation of 1W and max drain current of 0.03A. With a built-in diode, this MOSFET offers low on-resistance and high feedback capacitance for efficient performance.

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Nova Conductors

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Aztec Data Supply Inc.

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Advanced Electronics

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South Africa . 252 parts In-Stock

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AZTECH Wire

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Overview

Unleash the power of innovation with the LND150N8 by Supertex! Crafted with precision and expertise, this small signal field effect transistor (FET) offers unparalleled quality and reliability. Ideal for switching applications, this N-channel transistor boasts a built-in diode for seamless performance. With a maximum DS breakdown voltage of 500V and a maximum power dissipation of 1W, this transistor is designed to exceed expectations. Experience the cutting-edge technology of Supertex and elevate your projects to new heights with the LND150N8.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Suitable for many electronic applications due to its N-channel configuration.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with a built-in diode for added functionality.

Transistor Application: SWITCHING

Ideal for switching applications in various electronic circuits.

Minimum DS Breakdown Voltage: 500 V

Can withstand high voltage levels, making it suitable for different voltage requirements.

Package Shape: RECTANGULAR

Compact rectangular shape for easy integration into circuit designs.

Terminal Form: FLAT

Flat terminals allow for easy soldering and secure connections.

Operating Mode: DEPLETION MODE

Operates in depletion mode, providing specific characteristics for certain applications.

Maximum Power Dissipation (Abs): 1 W

Can handle up to 1 watt of power dissipation, suitable for many low-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient performance and high reliability.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability.

Terminal Finish: TIN LEAD

Tin lead finish for corrosion resistance and reliable connections.

Maximum Drain Current (ID): 0.03 A

Capable of handling up to 0.03 amps of drain current.

Maximum Drain-Source On Resistance: 1000 ohm

Low drain-source on resistance for efficient switching and minimal power loss.

Terminal Position: SINGLE

Single terminal position for easy installation and connection.

Case Connection: SOURCE

Case connection at the source for easy circuit design and integration.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance for improved performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) LND150N8 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Supertex

Specs

Additional Features:

HIGH INPUT IMPEDANCE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

.03 A

Maximum Drain-Source On Resistance:

1000 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1 pF

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

LND150N8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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