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X00602MN2AL2

STMicroelectronics

X00602MN2AL2 by STMicroelectronics

X00602MN2AL2 by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for high-voltage applications. It features a max DC gate trigger current of 0.2 mA and operates b/w -40 °C to 125°C, handling up to 600 V. This device is perfect for controlling power in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,706 parts In-Stock

1+ parts

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1k+ parts

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10k+ parts

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3,706

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Vyrian

USA . 2,210 parts In-Stock

1+ parts

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2,210

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Anansix

USA . 1,436 parts In-Stock

1+ parts

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100+ parts

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1,436

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,096 parts In-Stock

1+ parts

$4.181

100+ parts

-

1k+ parts

$3.763

10k+ parts

-

1,096

$4.181

-

$3.763

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MKK Technologies

India . 1,278 parts In-Stock

1+ parts

$7.863

100+ parts

-

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-

10k+ parts

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1,278

$7.863

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DigiPath Technology Company

USA . 1,278 parts In-Stock

1+ parts

$7.863

100+ parts

-

1k+ parts

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10k+ parts

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1,278

$7.863

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Corphita

USA . 4,794 parts In-Stock

1+ parts

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4,794

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Parana Technologies

USA . 662 parts In-Stock

1+ parts

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100+ parts

$5.000

1k+ parts

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10k+ parts

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662

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$5.000

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Overview

Elevate your projects with the X00602MN2AL2 from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) promises reliability and performance, ensuring optimal efficiency in diverse applications such as power management and motor control. With its robust design and wide operating temperature range, it’s perfect for both industrial and consumer electronics, giving you peace of mind and superior value in every use!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body enhances the reliability and longevity of the SCR, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current reduces power consumption, allowing for efficient operation in low-power circuits.

Configuration: SINGLE

The single configuration simplifies design and integration into circuits, providing ease of use and reduced complexity.

Package Shape: ROUND

The round package shape can facilitate compact designs and improve thermal performance in various applications.

Terminal Form: WIRE

The wire terminal form allows for flexible mounting options and provides robust connections in circuit designs.

Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating ensures the SCR can handle significant transient voltages, making it reliable in high-voltage applications.

Number of Terminals: 3

The three-terminal configuration offers versatility for different circuit topologies and easier interfacing.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is conducive to various mounting techniques and can optimize space in electronic designs.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature increases the versatility of the SCR in demanding environments and enhances its performance in heat-prone applications.

Trigger Device Type: SCR

As a silicon-controlled rectifier, this component has excellent switching capabilities, providing effective control in AC power applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures functionality in extreme cold conditions, expanding application possibilities.

Terminal Position: BOTTOM

The bottom terminal position allows for efficient heat dissipation and easy integration onto circuit boards.

Maximum RMS On-state Current: 0.8 A

A high on-state current rating enables the SCR to handle significant loads reliably, making it ideal for power control applications.

Case Connection: ANODE

The anode case connection ensures straightforward connectivity in circuit designs, enhancing compatibility and ease of use.

Repetitive Peak Off-state Voltage: 600 V

This high off-state voltage ensures robust performance under off conditions, protecting the circuit and extending component life.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X00602MN2AL2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X00602MN2AL2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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