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TXN1012RG

STMicroelectronics

TXN1012RG by STMicroelectronics

TXN1012RG by STMicroelectronics is a standard recovery thyristor with a 1 kV off-state voltage, max gate trigger voltage of 1.5 V, and supports up to 12 A RMS current. Ideal for power control applications, it operates in -40 °C to 125 °C range. Packaged in TO-220 for easy mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,222 parts In-Stock

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5,222

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Anansix

USA . 2,194 parts In-Stock

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2,194

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Digiode

USA . 1,225 parts In-Stock

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1,225

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Nova Conductors

Japan . 94 parts In-Stock

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94

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,028 parts In-Stock

1+ parts

$9.860

100+ parts

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1,028

$9.860

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Corphita

USA . 3,897 parts In-Stock

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3,897

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IDEA Electronic Components Group

UK . 2,350 parts In-Stock

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2,350

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MKK Technologies

India . 1,167 parts In-Stock

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1,167

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DigiPath Technology Company

USA . 1,167 parts In-Stock

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1,167

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Parana Technologies

USA . 650 parts In-Stock

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650

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Advanced Electronics

New Zealand . 407 parts In-Stock

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407

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Overview

Elevate your circuit design with the TXN1012RG from STMicroelectronics, a leader in semiconductor innovation. This high-quality thyristor delivers exceptional performance and reliability, ensuring optimal operation even in demanding environments. With robust voltage capabilities and low on-state losses, it’s perfect for industrial applications, motor control, and power management. Choose TXN1012RG to harness efficiency, durability, and peace of mind in your projects!

Feature Benefit Bullets

Other Names: 497-4479-5

Easily identifiable product code for quick referencing and inventory management.

Standard Package: 1,000

Bulk packaging makes it suitable for large-scale manufacturing and cost-effective procurement.

Category: Discrete Semiconductor Products, Thyristors, SCRs

Belongs to a well-established category of components widely used in power control applications.

Packaging: Tube

Tube packaging ensures safe transport and easy handling during assembly processes.

Voltage - Off State: 1 kV

High voltage capability allows it to be used in various high-voltage applications.

Voltage - Gate Trigger (Vgt) (Max): 1.5 V

Low trigger voltage enhances compatibility with a wide range of control circuits.

Current - Gate Trigger (Igt) (Max): 15 mA

Low gate trigger current makes it energy-efficient and easy to drive.

Voltage - On State (Vtm) (Max): 1.6 V

Low on-state voltage drop contributes to lower power losses during operation.

Current - On State (It (AV)) (Max): 8 A

Handles substantial average currents, suitable for medium-power applications.

Current - On State (It (RMS)) (Max): 12 A

Can manage high RMS currents, enhancing its utility in demanding environments.

Current - Hold (Ih) (Max): 30 mA

Low holding current supports reliable operation while minimizing power consumption.

Current - Off State (Max): 10 µA

Minimal leakage current improves the efficiency and reliability in off-state applications.

Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 125A

Robust surge current ratings enhance durability in handling sudden spikes in power.

SCR Type: Standard Recovery

Standard recovery ensures reliable operation in typical switching applications.

Operating Temperature: -40 °C ~ 125 °C

Wide operating temperature range makes it suitable for various harsh environments.

Mounting Type: Through Hole

Through-hole design provides strong mechanical support and ease of soldering.

Package / Case: TO-220-3

TO-220 package type facilitates efficient heat dissipation, crucial for high-power applications.

Supplier Device Package: TO-220

Familiar package for engineers ensures easy integration into existing designs.

Base Product Number: TXN1012

Base number indicates a specific product line, beneficial for compatibility assessments.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

MSL 1 rating means no special handling requirements, streamlining production processes.

Technical Specifications

Additional Parts TXN1012RG attributes and parameters. Explore more Additional Parts devices from STMicroelectronics

Technical Specifications

Other Names:

497-4479-5

Current - Off State (Max):

10 µA

Operating Temperature:

-40°C ~ 125°C

Category:

Discrete Semiconductor Products
Thyristors SCRs

Current - Hold (Ih) (Max):

30 mA

SCR Type:

Standard Recovery

Voltage - Gate Trigger (Vgt) (Max):

1.5 V

Current - Gate Trigger (Igt) (Max):

15 mA

Voltage - On State (Vtm) (Max):

1.6 V

Current - On State (It (AV)) (Max):

8 A

Mounting Type:

Through Hole

Supplier Device Package:

TO-220

Standard Package:

1,000

Voltage - Off State:

1 kV

Package / Case:

TO-220-3

Packaging:

Tube

Current - On State (It (RMS)) (Max):

12 A

Current - Non Rep. Surge 50, 60Hz (Itsm):

120A, 125A

Base Product Number:

TXN1012

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

TXN1012RG Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.30.0080

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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