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TSV6393IST

STMicroelectronics

TSV6393IST by STMicroelectronics

TSV6393IST by STMicroelectronics is a micropower operational amplifier ideal for automotive applications. It features a max input offset voltage of 4500 µV, a nominal voltage of 1.8V, and operates at temperatures from -40 °C to 125°C. Its compact design ensures efficient performance in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 4,000 parts In-Stock

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4,000

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Distributors (In-Stock)

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Vyrian

USA . 6,245 parts In-Stock

1+ parts

-

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6,245

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Digiode

USA . 2,355 parts In-Stock

1+ parts

-

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2,355

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Anansix

USA . 202 parts In-Stock

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202

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 1,129 parts In-Stock

1+ parts

$0.810

100+ parts

-

1k+ parts

-

10k+ parts

-

1,129

$0.810

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-

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IDEA Electronic Components Group

UK . 2,265 parts In-Stock

1+ parts

$4.351

100+ parts

-

1k+ parts

$3.916

10k+ parts

-

2,265

$4.351

-

$3.916

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Microchip USA

USA . 6,435 parts In-Stock

1+ parts

$5.507

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-

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6,435

$5.507

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MKK Technologies

India . 1,172 parts In-Stock

1+ parts

$8.181

100+ parts

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1,172

$8.181

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DigiPath Technology Company

USA . 1,172 parts In-Stock

1+ parts

$8.181

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-

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1,172

$8.181

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AZTECH Wire

Italy . 990 parts In-Stock

1+ parts

$10.560

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990

$10.560

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Component Stockers USA

USA . 2,509 parts In-Stock

1+ parts

$14.890

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2,509

$14.890

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Perfect Parts

USA . 8,960 parts In-Stock

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8,960

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Corphita

USA . 2,889 parts In-Stock

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2,889

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A-Z Elektronik GmbH

Germany . 2,228 parts In-Stock

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2,228

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Parana Technologies

USA . 408 parts In-Stock

1+ parts

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$5.202

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408

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$5.202

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Overview

Unlock unparalleled performance with the TSV6393IST from STMicroelectronics, where cutting-edge technology meets exceptional reliability. Ideal for automotive and industrial applications, this operational amplifier promises enhanced precision and power efficiency, ensuring your designs operate flawlessly even in demanding environments. With STMicroelectronics' renowned commitment to quality, you gain a trusted partner that maximizes your project's success while minimizing complexity and cost. Elevate your next innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and is suitable for various applications, ensuring the chip is protected from environmental factors.

Maximum Input Offset Voltage: 4500 uV

Low input offset voltage enhances accuracy and precision in applications, making it suitable for sensitive measurement tasks.

Maximum Average Bias Current (IIB): 0.000001 uA

Ultra-low bias current ensures minimal error and improved performance in high-impedance applications.

Surface Mount: YES

Surface mount technology allows for compact designs and easier integration into modern circuit boards.

No. of Functions: 2

Having multiple functions increases versatility, allowing for multiple applications in a single component.

Package Shape: SQUARE

Square package shape facilitates efficient use of PCB space and simplifies layout designs.

Nominal Common Mode Reject Ratio: 74 dB

A high CMRR minimizes the effect of noise and interference, ensuring high signal integrity.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal supply voltage enables usage in battery-operated devices, enhancing energy efficiency.

Power Supplies (V): 1.8/5

Dual supply voltage options increase flexibility for various circuit configurations and applications.

No. of Terminals: 10

The 10-terminal design supports complex circuit connections while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Thin profile and small outline design enhance integration into tight spaces, suitable for compact device designs.

Maximum Supply Voltage Limit: 6 V

A generous supply voltage limit expands usage scenarios, allowing for operation in various environments.

Maximum Operating Temperature: 125 °C

High operating temperature capability ensures reliability in demanding automotive and industrial applications.

Maximum Bias Current (IIB) @ 25C: 0.00001 uA

Extremely low bias current at standard temperature indicates high efficiency and suitability for low-power applications.

Frequency Compensation: YES

Built-in frequency compensation ensures stability in feedback systems, leading to reliable performance across frequencies.

Minimum Voltage Gain: 10000

High voltage gain is advantageous for amplifying small signals, making it ideal for various sensor applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature expands the range of environmental conditions where the op-amp can function reliably.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, enhancing the longevity of connections.

Terminal Position: DUAL

Dual terminal position allows for flexible layout options and facilitates efficient circuit design.

Maximum Seated Height: 1.1 mm

Low seated height is ideal for low-profile applications where space is at a premium.

Width: 3 mm

Compact width ensures easy integration into small electronic designs without sacrificing performance.

Micropower: YES

Micropower operation allows for energy-efficient designs, essential for battery-powered devices and low-power applications.

Maximum Time At Peak Reflow Temperature (s): 30

Extended time at peak temperature allows for proper soldering during assembly, ensuring device reliability.

Peak Reflow Temperature °C: 260

Supports standard soldering processes, providing versatility in manufacturing and assembly.

Length: 3 mm

Short length optimizes chip footprint while accommodating necessary functionality.

Temperature Grade: AUTOMOTIVE

Automotive grade ensures the product meets stringent reliability standards required for automotive applications.

Low-Bias: YES

Low-bias characteristics are crucial for highly sensitive analog applications, reducing signal distortion.

Nominal Unity Gain Bandwidth: 2000 kHz

High unity gain bandwidth allows for effective use in high-speed applications and ensures fast response times.

Technology: CMOS

CMOS technology enables low power consumption and high integration density, beneficial for modern electronic designs.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and ease of soldering during assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

The operational amplifier type is widely used in signal processing applications, highlighting its versatility.

Maximum Supply Current: 0.144 mA

Low supply current increases overall efficiency, making it suitable for power-sensitive applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is popular for its stability and performance characteristics in a variety of applications.

Packing Method: TAPE AND REEL

Tape and reel packing facilitates automated assembly processes, ensuring efficient manufacturing.

Nominal Slow Rate: 0.7 V/us

A slow slew rate is beneficial for certain applications, preventing overshoot and ensuring signal fidelity.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for more compact designs while maintaining functionality and performance.

Technical Specifications

Operational Amplifiers (Op Amps) TSV6393IST attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

1.8/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

74 dB

Input Offset Voltage Limit:

4500 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.7 V/us

Peak Bias Current:

1 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

144 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

TSV6393IST Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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