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TSH690IDT

STMicroelectronics

TSH690IDT by STMicroelectronics

TSH690IDT by STMicroelectronics is a wideband low-power RF amplifier with a gain of 19 dB and operates b/w 40 MHz to 1 GHz. It supports max input power of 10 dBm and functions effectively in temperatures from -40 °C to 85°C. Ideal for surface mount applications, it features an 8-terminal plastic/epoxy package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,451 parts In-Stock

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2,451

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Anansix

USA . 1,026 parts In-Stock

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1,026

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Digiode

USA . 198 parts In-Stock

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198

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,068 parts In-Stock

1+ parts

$2.176

100+ parts

-

1k+ parts

$1.958

10k+ parts

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1,068

$2.176

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$1.958

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MKK Technologies

India . 351 parts In-Stock

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$4.091

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351

$4.091

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DigiPath Technology Company

USA . 351 parts In-Stock

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$4.091

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351

$4.091

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AZTECH Wire

Italy . 923 parts In-Stock

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$8.740

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923

$8.740

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Corphita

USA . 2,513 parts In-Stock

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2,513

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Parana Technologies

USA . 263 parts In-Stock

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$2.602

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263

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$2.602

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Overview

Unlock the potential of your RF designs with the TSH690IDT from STMicroelectronics, a trusted leader in semiconductor innovation. This wide-band low-power amplifier combines superior performance and reliability, ensuring optimal signal integrity across diverse applications. With its robust temperature range and compact surface mount design, the TSH690IDT delivers unmatched quality and efficiency, empowering engineers to create cutting-edge solutions that stand the test of time. Experience excellence with every connection!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and lightweight characteristics, making this amplifier suitable for various applications, particularly in compact designs.

Maximum Input Power (CW): 10 dBm

With a maximum input power of 10 dBm, this amplifier is designed for low-power applications, which makes it ideal for battery-operated devices.

Construction: COMPONENT

As a component-level device, it can easily be integrated into various circuit designs, providing flexibility and convenience for engineers.

Power Supplies (V): 2.7

The low supply voltage of 2.7V enhances power efficiency, reducing energy consumption and heat generation during operation.

No. of Terminals: 8

Featuring 8 terminals allows for multiple interconnections, simplifying the integration process into RF circuits.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance in demanding environments and enhances the component's longevity.

Minimum Operating Temperature: -40 °C

The capability to operate at -40 °C makes this amplifier suitable for harsh environments, including outdoor and automotive applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This terminal finish provides excellent corrosion resistance and improved solderability, ensuring strong and reliable electrical connections.

Technology: BIPOLAR

Bipolar technology offers superior signal performance and efficiency, enhancing the amplifier's overall linearity and reliability.

RF or Microwave Device Type: WIDE BAND LOW POWER

This amplifier's wide band low power configuration is ideal for diverse applications, including communication systems and signal processing.

Characteristic Impedance: 50 ohm

Designed for a standard characteristic impedance of 50 ohms, it ensures compatibility with most RF systems, maximizing signal integrity.

Gain: 19 dB

With a gain of 19 dB, this amplifier provides significant amplification of weak RF signals, making it suitable for various signal enhancement applications.

Minimum Operating Frequency: 40 MHz

A minimum operating frequency of 40 MHz allows this amplifier to operate effectively across a broad range of RF applications.

Mounting Feature: SURFACE MOUNT

Surface mount technology allows for compact and automated PCB assembly, facilitating cost-effective production and smaller device form factors.

Maximum Operating Frequency: 1000 MHz

Operating up to 1000 MHz makes this amplifier suitable for a wide range of RF applications, including communication and broadcasting.

Technical Specifications

RF & Microwave Amplifiers TSH690IDT attributes and parameters. Explore more RF & Microwave Amplifiers devices from STMicroelectronics

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

19 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

1000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOP8,.25

Power Supplies (V):

2.7

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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