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TSB572IYQ2T

STMicroelectronics

TSB572IYQ2T by STMicroelectronics

TSB572IYQ2T by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 2100 µV and an AEC-Q100 screening level, ideal for automotive applications. It features a nominal voltage of 12 V and operates from -40 °C to 125 °C. With a low bias current of just 0.07 µA, it ensures high precision in signal processing tasks.

Median Price

$0.960

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,656 parts In-Stock

1+ parts

$0.960

100+ parts

-

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2,656

$0.960

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Vyrian

USA . 9,985 parts In-Stock

1+ parts

-

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9,985

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Anansix

USA . 2,743 parts In-Stock

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2,743

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,870 parts In-Stock

1+ parts

$0.860

100+ parts

-

1k+ parts

-

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-

1,870

$0.860

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-

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Corphita

USA . 3,448 parts In-Stock

1+ parts

$0.909

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-

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3,448

$0.909

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Component Stockers USA

USA . 1,539 parts In-Stock

1+ parts

$1.690

100+ parts

$1.220

1k+ parts

$0.830

10k+ parts

-

1,539

$1.690

$1.220

$0.830

-

IDEA Electronic Components Group

UK . 2,126 parts In-Stock

1+ parts

$4.437

100+ parts

-

1k+ parts

$3.993

10k+ parts

-

2,126

$4.437

-

$3.993

-

MKK Technologies

India . 712 parts In-Stock

1+ parts

$8.344

100+ parts

-

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712

$8.344

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DigiPath Technology Company

USA . 712 parts In-Stock

1+ parts

$8.344

100+ parts

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712

$8.344

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Microchip USA

USA . 3,986 parts In-Stock

1+ parts

$10.061

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3,986

$10.061

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RC Electronics

USA . 7,000 parts In-Stock

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7,000

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Kepictronics

USA . 5,609 parts In-Stock

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5,609

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Continental Prestige Electronics

USA . 2,900 parts In-Stock

1+ parts

-

100+ parts

$1.060

1k+ parts

$0.722

10k+ parts

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2,900

-

$1.060

$0.722

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Parana Technologies

USA . 2,103 parts In-Stock

1+ parts

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100+ parts

$5.305

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2,103

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$5.305

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Unlock the power of precision with the TSB572IYQ2T operational amplifier from STMicroelectronics. Renowned for quality and innovation, STMicroelectronics delivers unmatched performance for automotive and industrial applications. This robust, micropower op amp offers exceptional low offset voltage and minimal bias current, ensuring reliability in demanding environments. Elevate your designs with superior signal integrity and efficiency—your projects deserve nothing less!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 2100 uV

A low maximum input offset voltage allows for high precision and accuracy in signal amplification.

Maximum Average Bias Current (IIB): 0.07 uA

The extremely low bias current ensures minimal signal distortion, making it a great choice for low-power applications.

Surface Mount: YES

Surface mount capability permits compact design and easy integration into modern electronic circuits.

No. of Functions: 2

Having multiple functions allows for cost-saving by reducing the number of necessary components in a design.

Screening Level: AEC-Q100

Compliance with automotive standards ensures reliability and performance in automotive applications.

Package Shape: SQUARE

A square package shape allows for better space utilization on PCBs.

Nominal Common Mode Reject Ratio: 106 dB

High common mode reject ratio minimizes interference from noise, ensuring cleaner signal amplification.

Nominal Supply Voltage / Vsup (V): 12

Optimal supply voltage for a wide range of applications, balancing performance and power consumption.

No. of Terminals: 8

The 8-terminal design supports versatile configurations for diverse circuit designs.

Maximum Input Offset Current (IIO): 0.015 uA

Very low input offset current leads to better performance in precision applications with low signal levels.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

This design is ideal for applications where space is limited while still providing efficient heat management.

Minimum Slew Rate: 0.4 V/us

A minimum slew rate of 0.4 V/us ensures quick response times for dynamic signal changes, making it suitable for high-frequency applications.

Maximum Supply Voltage Limit: 40 V

High supply voltage limit enhances flexibility for a variety of power supply configurations.

Maximum Operating Temperature: 125 C

High operating temperature rating guarantees reliability in harsh conditions, making it suitable for automotive and industrial use.

Maximum Bias Current (IIB) @25°C: 0.03 uA

Improved low bias current at specified temperature ensures enhanced performance in sensitive applications.

Frequency Compensation: YES

Built-in frequency compensation makes this op-amp stable across a wide range of applications without requiring external components.

Minimum Voltage Gain: 56234

Very high voltage gain makes it suitable for amplifying weak signals without significant noise.

Minimum Operating Temperature: -40 C

Wide temperature range ensures functionality in extreme environments, making it ideal for automotive applications.

Terminal Position: DUAL

Dual terminal positioning offers flexible integration into various PCB layouts.

Maximum Seated Height: 0.8 mm

Low profile dimensions facilitate compact design solutions for modern electronics.

Width: 3 mm

Compact width allows for space-efficient placement on PCBs.

Micropower: YES

Micropower capability makes it ideal for battery-operated devices, enhancing energy efficiency.

Length: 3 mm

Short length supports compact designs in space-constrained applications.

Temperature Grade: AUTOMOTIVE

Designed specifically for automotive applications, ensuring robustness and reliability under automotive conditions.

Nominal Unity Gain Bandwidth: 2400 kHz

High bandwidth capability allows for precise amplification across a wide range of frequencies.

Minimum Common Mode Reject Ratio: 80 dB

A minimum common mode reject ratio of 80 dB offers adequate performance against noise in various applications.

Technology: BICMOS

BICMOS technology combines the advantages of both bipolar and CMOS transistors, providing better performance specifications.

Terminal Form: NO LEAD

No lead design supports innovative PCB layout freedoms and enhances reliability.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are highly versatile components widely used in various electronic applications.

Maximum Supply Current: 1.1 mA

Low supply current enhances energy efficiency, making it suitable for battery-driven applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides simpler designs with predictable behavior in most applications.

Packing Method: TR

Tape and reel packing facilitates automated assembly processes, ideal for high-volume production.

Nominal Slow Rate: 0.92 V/us

Slew rate specification ensures sufficient performance for various application requirements.

Terminal Pitch: 0.65 mm

Fine terminal pitch enables higher density layouts and efficient use of PCB real estate.

Technical Specifications

Operational Amplifiers (Op Amps) TSB572IYQ2T attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

106 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

2100 uV

Minimum Voltage Gain:

56234

Minimum Slew Rate:

0.4 V/us

Nominal Slew Rate:

0.92 V/us

Maximum Input Offset Current (IIO):

15 nA

Peak Bias Current:

70 nA

Maximum Bias Current (IIB) @25 °C:

30 nA

Operational Characteristics

Nominal Supply Voltage:

12 V

Maximum Supply Voltage:

40 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.1 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.031 in (0.8 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

S-PDSO-N8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

SOLCC8,.12,25

Trade Compliance

TSB572IYQ2T Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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