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TS952IYD

STMicroelectronics

TS952IYD by STMicroelectronics

TS952IYD by STMicroelectronics is a dual operational amplifier ideal for automotive applications. It features a max input offset voltage of 8000 µV, low bias current of 0.2 µA, and operates within -40 °C to 125 °C. This compact op-amp supports supply voltages from 3V to 14V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,751 parts In-Stock

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2,751

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Anansix

USA . 2,055 parts In-Stock

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2,055

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Digiode

USA . 1,425 parts In-Stock

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1,425

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 224 parts In-Stock

1+ parts

$3.789

100+ parts

-

1k+ parts

$3.411

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224

$3.789

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$3.411

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Microchip USA

USA . 446 parts In-Stock

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$5.315

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446

$5.315

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MKK Technologies

India . 782 parts In-Stock

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$7.126

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782

$7.126

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DigiPath Technology Company

USA . 782 parts In-Stock

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$7.126

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782

$7.126

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AZTECH Wire

Italy . 820 parts In-Stock

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$12.410

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820

$12.410

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Corphita

USA . 2,358 parts In-Stock

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Vigor

Singapore . 2,181 parts In-Stock

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Parana Technologies

USA . 1,267 parts In-Stock

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$4.531

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1,267

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$4.531

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Overview

Unlock unparalleled performance with the TS952IYD operational amplifier from STMicroelectronics. Designed for automotive applications, this high-quality, AEC-Q100 certified device delivers exceptional precision and reliability in demanding environments. With a compact footprint and dual functionality, it ensures seamless integration into your projects. Choose the TS952IYD to elevate your designs with low power consumption and superior temperature resilience, empowering innovation without compromise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures reliability in various applications, making the Op Amp suitable for automotive environments.

Maximum Input Offset Voltage: 8000 uV

The high input offset voltage capability allows for better performance in applications where precision is not critical, making it versatile for various circuits.

Maximum Average Bias Current (IIB): 0.2 uA

The low average bias current contributes to reduced power consumption, making it ideal for battery-operated devices.

Surface Mount: YES

The surface mount capability allows for compact designs, facilitating better circuit density and reducing PCB space.

No. of Functions: 2

Having two functions enables multiple operations from a single chip, enhancing efficiency and reducing overall system costs.

Screening Level: AEC-Q100

This screening level ensures automotive-grade reliability, making it suitable for use in automotive applications.

Package Shape: RECTANGULAR

The rectangular package shape provides an efficient layout for PCB design, enhancing space optimization.

Nominal Common Mode Reject Ratio: 80 dB

With a high CMRR, the Op Amp can effectively reject noise, ensuring accurate signal amplification in noisy environments.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low nominal supply voltage allows for compatibility with a wide range of battery-powered devices.

Power Supplies (V): 3/5

The flexibility of operating on multiple voltage supplies enhances compatibility with various systems and applications.

No. of Terminals: 8

The 8-terminal configuration provides sufficient connections for complex circuitry while maintaining a compact design.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces PCB space requirements, facilitating compact electronic designs.

Maximum Supply Voltage Limit: 14 V

This high supply voltage limit allows the Op Amp to be used in high-performance circuits without risk of damage.

Maximum Operating Temperature: 125 °C

The capability to operate at high temperatures makes it suitable for harsh environments, especially in automotive applications.

Maximum Bias Current (IIB) @25 °C: 0.1 uA

This ultra-low bias current improves performance in precision applications by minimizing errors.

Frequency Compensation: YES

Inclusion of frequency compensation enhances stability and performance in a variety of applications.

Minimum Operating Temperature: -40 °C

The ability to function in low temperatures ensures the Op Amp is reliable in cold ambient conditions, essential for automotive applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish ensures excellent solderability and corrosion resistance, enhancing the longevity of the product.

Terminal Position: DUAL

The dual terminal positioning allows for flexible PCB layout and design, accommodating various configurations.

Maximum Seated Height: 1.75 mm

A low seated height contributes to a slim profile, supporting modern, compact electronic designs.

Width: 3.9 mm

A narrow width allows for efficient use of PCB space, appealing for designs with space constraints.

Length: 4.9 mm

A short length keeps the footprint minimal, enabling compact circuit layouts.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this grade ensures high reliability and performance in critical environments.

Nominal Unity Gain Bandwidth: 3000 kHz

A high unity gain bandwidth makes this Op Amp suitable for high-frequency applications, ensuring performance in fast signal processing.

Technology: BICMOS

The BICMOS technology combines the advantages of bipolar and CMOS processes, providing low power consumption and high speed.

Terminal Form: GULL WING

The gull wing terminal design allows for easy soldering and enhances PCB assembly efficiency.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is versatile and can be used for various signal processing applications.

Maximum Supply Current: 2.8 mA

Low supply current contributes to energy efficiency, extending battery life in portable devices.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture is ideal for many applications, providing precision and stable performance.

Packing Method: TUBE

The tube packing method ensures safe and efficient handling during shipment and storage, minimizing damage.

Nominal Slow Rate: 1 V/µs

This slow rate allows for controlled response times, making it suitable for certain applications requiring gradual signal processing.

Terminal Pitch: 1.27 mm

A standard terminal pitch provides compatibility with a wide range of PCB technologies, facilitating easy integration.

Technical Specifications

Operational Amplifiers (Op Amps) TS952IYD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

8000 uV

Nominal Slew Rate:

1 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

14 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.8 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS952IYD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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