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TS925IDT

STMicroelectronics

TS925IDT by STMicroelectronics

TS925IDT by STMicroelectronics is a versatile operational amplifier featuring a max input offset voltage of 5000 µV, a nominal voltage of 3 V, and an impressive common mode reject ratio of 80 dB. Ideal for automotive applications, it operates efficiently in temperatures from -40 °C to 125°C. With its compact design and low bias current of just 0.1 µA, it's perfect for space-constrained environments.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 6 parts In-Stock

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$1.540

100+ parts

$1.150

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$1.000

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6

$1.540

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$1.000

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Vyrian

USA . 9,197 parts In-Stock

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Chip Stock

USA . 3,500 parts In-Stock

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3,500

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Digiode

USA . 2,701 parts In-Stock

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2,701

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Anansix

USA . 2,186 parts In-Stock

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A&K Electronics

USA . 103 parts In-Stock

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Bristol Electronics

USA . 103 parts In-Stock

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103

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,174 parts In-Stock

1+ parts

$5.893

100+ parts

-

1k+ parts

$5.303

10k+ parts

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2,174

$5.893

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$5.303

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Microchip USA

USA . 484 parts In-Stock

1+ parts

$6.252

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484

$6.252

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MKK Technologies

India . 1,739 parts In-Stock

1+ parts

$11.081

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1,739

$11.081

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DigiPath Technology Company

USA . 1,739 parts In-Stock

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$11.081

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1,739

$11.081

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AZTECH Wire

Italy . 914 parts In-Stock

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$20.710

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914

$20.710

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A-Z Elektronik GmbH

Germany . 7,044 parts In-Stock

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Vigor

Singapore . 3,683 parts In-Stock

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Perfect Parts

USA . 2,586 parts In-Stock

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Parana Technologies

USA . 1,121 parts In-Stock

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$7.046

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Assy Fe

Spain . 1,004 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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Corphita

USA . 639 parts In-Stock

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Kepictronics

USA . 90 parts In-Stock

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Overview

Unlock unparalleled performance with the TS925IDT operational amplifier from STMicroelectronics, a trusted leader in innovation. Designed for precision and reliability, this op-amp excels in automotive and industrial applications, delivering superior voltage feedback and exceptional common mode rejection. With its compact footprint and robust temperature range, the TS925IDT ensures seamless integration and energy efficiency, empowering your projects with unmatched quality and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material contributes to the reliability and efficiency of the operational amplifier in various applications.

Maximum Input Offset Voltage: 5000 uV

A low offset voltage ensures higher accuracy in signal processing, making this op-amp suitable for precision applications.

Maximum Average Bias Current (IIB): 0.1 uA

The low bias current minimizes error and improves the overall performance in low-power circuits.

Surface Mount: YES

Designed for surface mounting, this op-amp can be easily integrated into modern compact circuit designs.

Number of Functions: 4

Having multiple functions allows for greater versatility in circuit design, providing more options for users.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout and placement on PCBs, optimizing space utilization.

Nominal Common Mode Reject Ratio: 80 dB

A high CMRR indicates excellent ability to reject noise and unwanted signals, improving performance in noisy environments.

Nominal Supply Voltage / Vsup (V): 3

Low supply voltage operation allows for the design of energy-efficient circuits, extending battery life in portable applications.

Power Supplies (V): 3/5

Flexible power supply requirements make this op-amp suitable for a variety of applications.

Number of Terminals: 16

The 16-terminal configuration allows for more functionalities and routing options in sophisticated circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package is ideal for space-constrained environments while still maintaining high performance.

Minimum Slew Rate: 0.7 V/us

A good slew rate ensures that the amplifier can respond quickly to changes in input signals, making it suitable for dynamic applications.

Maximum Supply Voltage Limit: 14 V

This high supply voltage capability allows for a wide range of applications, including those requiring higher power levels.

Maximum Operating Temperature: 125 °C

A high operating temperature range makes this op-amp suitable for automotive and industrial applications where heat is a factor.

Maximum Bias Current (IIB) @25°C: 0.1 uA

Consistent low current characteristics across temperature ensures reliable performance.

Frequency Compensation: YES

Built-in frequency compensation simplifies design and enhances stability across various operating conditions.

Minimum Operating Temperature: -40 °C

The extended temperature range allows for use in harsh environments, broadening application possibilities.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Premium terminal finish ensures durability and excellent conductivity for reliable electrical connections.

Terminal Position: DUAL

Dual terminal position enhances layout flexibility and eases PCB design.

Maximum Seated Height: 1.75 mm

A compact height complements the design constraints of modern electronic systems.

Width: 3.9 mm

Narrow width supports integration into tighter spaces on circuit boards.

Maximum Time At Peak Reflow Temperature (s): 30

This fact makes it compatible with standard reflow soldering processes for assembly.

Peak Reflow Temperature (°C): 260

High reflow temperature tolerance ensures robust assembly and reliability of the op-amp in varied environments.

Length: 9.9 mm

Compact length aids in the development of space-efficient electronic designs.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, ensuring reliability under rigorous operating conditions.

Nominal Unity Gain Bandwidth: 4000 kHz

High bandwidth allows the op-amp to handle a variety of applications, enabling high-speed signal amplification.

Technology: BICMOS

BICMOS technology combines the advantages of both bipolar and CMOS technologies, offering enhanced performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and rework, improving manufacturing efficiency.

Amplifier Type: OPERATIONAL AMPLIFIER

As a versatile operational amplifier, it can be used in a wide variety of linear applications.

Maximum Supply Current: 8 mA

A low maximum supply current allows for lower power consumption in battery-operated devices.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is known for its versatility and stability, which is ideal for various applications.

Packing Method: TAPE AND REEL

Tape and reel packaging facilitates automated assembly, increasing production efficiency.

Nominal Slow Rate: 1.3 V/us

With a moderate slow rate, this ensures effective operation for baseband signals and audio applications.

Terminal Pitch: 1.27 mm

Standard terminal pitch ensures compatibility with most PCB layouts and eases the manufacturing process.

Moisture Sensitivity Level (MSL): 3

An MSL rating of 3 indicates that it can withstand some exposure to moisture before needing to be processed.

Technical Specifications

Operational Amplifiers (Op Amps) TS925IDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

5000 uV

Minimum Slew Rate:

0.7 V/us

Nominal Slew Rate:

1.3 V/us

Peak Bias Current:

100 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

14 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

8 mA

Physical Characteristics

Length:

0.39 in (9.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

16

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP16,.25

Trade Compliance

TS925IDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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