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TS924AIN

STMicroelectronics

TS924AIN by STMicroelectronics

TS924AIN by STMicroelectronics is a versatile operational amplifier featuring a max input offset voltage of 1800 µV, a nominal voltage of 3V, and an impressive common mode reject ratio of 80 dB. Ideal for automotive applications, it operates b/w -40 °C to 125 °C. With its BICMOS technology and low bias current of just 0.1 µA, it ensures high performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,455 parts In-Stock

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6,455

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Digiode

USA . 4,182 parts In-Stock

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4,182

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Anansix

USA . 1,718 parts In-Stock

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1,718

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 540 parts In-Stock

1+ parts

$4.566

100+ parts

-

1k+ parts

$4.109

10k+ parts

-

540

$4.566

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$4.109

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AZTECH Wire

Italy . 1,012 parts In-Stock

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$8.280

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-

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1,012

$8.280

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MKK Technologies

India . 2,307 parts In-Stock

1+ parts

$8.586

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2,307

$8.586

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DigiPath Technology Company

USA . 2,307 parts In-Stock

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$8.586

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2,307

$8.586

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Microchip USA

USA . 307 parts In-Stock

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$11.301

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307

$11.301

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A-Z Elektronik GmbH

Germany . 7,157 parts In-Stock

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Kepictronics

USA . 4,350 parts In-Stock

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4,350

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Vigor

Singapore . 3,750 parts In-Stock

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3,750

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Corphita

USA . 2,889 parts In-Stock

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2,889

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Parana Technologies

USA . 2,151 parts In-Stock

1+ parts

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$5.459

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2,151

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$5.459

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Overview

Unlock exceptional performance with the TS924AIN operational amplifier from STMicroelectronics. Renowned for its cutting-edge technology and reliability, this versatile op-amp is perfect for automotive and industrial applications where precision and efficiency are paramount. With an impressive common mode reject ratio and ultra-low bias current, the TS924AIN ensures superior signal integrity while delivering long-term value. Choose STMicroelectronics for quality that powers your innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 1800 uV

A low input offset voltage ensures greater accuracy in signal processing, making this Op Amp ideal for precision applications.

Maximum Average Bias Current (IIB): 0.1 uA

Low bias current minimizes errors and improves overall performance, particularly in low-power and precision circuits.

No. of Functions: 4

With four functions available, this Op Amp provides versatility for various circuit configurations, saving space and design complexity.

Package Shape: RECTANGULAR

The rectangular packaging allows for efficient use of board space and easy integration into various designs.

Nominal Common Mode Reject Ratio: 80 dB

A high common mode rejection ratio enhances the Op Amp's performance in noisy environments, ensuring reliable signal amplification.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this Op Amp ideal for low-voltage applications and battery-powered devices.

Power Supplies (V): 3/5

The ability to operate at both 3V and 5V supply voltages adds flexibility for system design and power management.

No. of Terminals: 14

Having 14 terminals allows for multiple connections, facilitating complex circuit designs and features.

Package Style (Meter): IN-LINE

The in-line package style simplifies integration into printed circuit boards, allowing for a streamlined assembly process.

Minimum Slew Rate: 0.7 V/us

A decent slew rate enables the Op Amp to handle fast-changing signals, improving dynamic performance in audio and video applications.

Maximum Supply Voltage Limit: 14 V

The ability to operate at up to 14V provides flexibility for higher voltage applications, broadening its usability.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this Op Amp is suitable for high-temperature environments, ensuring reliability.

Maximum Bias Current (IIB) @25 °C: 0.1 uA

Maintaining a low bias current at 25 °C further confirms the Op Amp's suitability in precision applications and long-term reliability.

Frequency Compensation: YES

Built-in frequency compensation allows for stable operation across a range of frequencies, enhancing performance in various configurations.

Minimum Operating Temperature: -40 °C

A wide temperature range from -40 °C to 125 °C makes this Op Amp perfect for automotive and industrial applications with fluctuating temperatures.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish ensures excellent conductivity and resistance to corrosion, increasing the lifespan of the device.

Terminal Position: DUAL

Dual terminal positions simplify routing on the PCB, streamlining circuit design and improving manufacturability.

Maximum Seated Height: 5.1 mm

A compact seated height allows for low-profile designs, which is beneficial in space-constrained applications.

Width: 7.62 mm

A width of 7.62 mm aids in compact design strategies, making this Op Amp suitable for tight layouts.

Length: 20 mm

The length of 20 mm provides sufficient area for connections while maintaining a manageable size for diverse applications.

Temperature Grade: AUTOMOTIVE

Rated for automotive use, this Op Amp is built to withstand harsh conditions, making it ideal for car electronics.

Nominal Unity Gain Bandwidth: 4000 kHz

A high unity gain bandwidth allows for fast response times in signal processing, making this Op Amp highly suitable for high-speed applications.

Technology: BICMOS

Using BICMOS technology combines the benefits of bipolar and CMOS processes, resulting in low noise and power consumption.

Terminal Form: THROUGH-HOLE

Through-hole technology provides robust mechanical connections, making the Op Amp suitable for demanding environments.

Amplifier Type: OPERATIONAL AMPLIFIER

As a standard operational amplifier, this device is versatile and can be implemented in a wide range of applications, from signal conditioning to filters.

Maximum Supply Current: 7 mA

Low supply current enhances energy efficiency, making this Op Amp ideal for battery-operated devices.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture is well-suited for a variety of applications, offering flexibility in circuit design and implementation.

Packing Method: TUBE

Packed in tubes, these Op Amps are easy to handle and protect during transport, ensuring reliability upon delivery.

Nominal Slow Rate: 1.3 V/us

A nominal slew rate of 1.3 V/us enhances the Op Amp's ability to accurately reproduce fast signals, improving performance in dynamic applications.

Terminal Pitch: 2.54 mm

The 2.54 mm pitch allows for compatibility with standard PCB designs and easy integration into various equipment.

Technical Specifications

Operational Amplifiers (Op Amps) TS924AIN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

1800 uV

Minimum Slew Rate:

0.7 V/us

Nominal Slew Rate:

1.3 V/us

Peak Bias Current:

100 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

14 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

7 mA

Physical Characteristics

Length:

0.787 in (20 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.201 in (5.1 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TS924AIN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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