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STTH8R06G

STMicroelectronics

STTH8R06G by STMicroelectronics

STTH8R06G by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, ideal for applications requiring quick response times. It features a max reverse recovery time of 0.045 µs, supports up to 600 V, and operates at temperatures up to 175 °C. This surface-mount device offers an output current of 8 A in a compact rectangular package.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Chip Stock

USA . 41,500 parts In-Stock

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Vyrian

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Digiode

USA . 3,720 parts In-Stock

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Bristol Electronics

USA . 924 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 772 parts In-Stock

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Anansix

USA . 757 parts In-Stock

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ComSIT Distribution GmbH

Germany . 112 parts In-Stock

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EMSNET

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IDEA Electronic Components Group

UK . 867 parts In-Stock

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$0.155

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$0.140

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867

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$0.140

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MKK Technologies

India . 933 parts In-Stock

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$0.292

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DigiPath Technology Company

USA . 933 parts In-Stock

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$0.292

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AZTECH Wire

Italy . 843 parts In-Stock

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$13.090

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

Germany . 6,558 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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Parana Technologies

USA . 536 parts In-Stock

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Corphita

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Overview

Unlock unparalleled efficiency with the STTH8R06G from STMicroelectronics, a top-tier diode designed for high voltage ultra-fast recovery applications. With its robust construction and superior thermal performance, this rectifier delivers reliability you can depend on. Perfect for demanding environments, it ensures swift reverse recovery and enhanced circuit stability, making it an ideal choice for power supply designs. Elevate your projects with quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, enhancing the longevity and reliability of the diode.

Config: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various applications.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly processes, improving manufacturing efficiency.

Maximum Reverse Recovery Time: 0.045 us

A low reverse recovery time minimizes switching losses, making this diode suitable for high-frequency applications and improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape can optimize space utilization on PCBs and facilitates better thermal management.

No. of Terminals: 2

A simple two-terminal arrangement promotes ease of integration while enhancing reliability by reducing potential failure points.

Package Style (Meter): SMALL OUTLINE

Small outline packaging minimizes the footprint of the component, allowing for denser circuit designs without compromising performance.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage applications with ultra-fast recovery, making it ideal for power electronics and demanding environments.

Maximum Operating Temperature: 175 °C

A high operating temperature rating expands the range of conditions under which the diode can operate, ensuring reliability in extreme environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring strong connections in various applications.

Terminal Position: SINGLE

Single terminal positioning simplifies installation and ensures that the diode is shielded from mechanical stress, enhancing durability.

Case Connection: CATHODE

The specific cathode connection optimizes performance in reverse voltage applications, ensuring reliability and efficient operation.

Maximum Time At Peak Reflow Temperature: 30 s

A peak reflow time of 30 seconds allows for flexibility in the soldering process, enabling effective thermal profiles during assembly.

Peak Reflow Temperature: 245 °C

This temperature rating ensures compatibility with standard soldering processes, promoting ease of manufacturing and assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply and signal rectification applications.

Maximum Forward Voltage (VF): 1.8 V

A maximum forward voltage of 1.8 V ensures low conduction losses, enhancing overall efficiency in power applications.

Maximum Output Current: 8 A

With a capability of handling 8 A, this diode is suitable for a wide range of power applications, making it versatile for engineers.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and make automated placement easy during assembly.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high repetitive peak reverse voltage rating makes this diode ideal for high voltage applications, ensuring reliability under stress.

Maximum Non Repetitive Peak Forward Current: 80 A

The ability to handle non-repetitive peak forwarding currents of up to 80 A allows the diode to withstand transient conditions without failure.

Diode Element Material: SILICON

Silicon as the diode element material ensures high performance and efficiency, contributing to the diode's robustness in various applications.

Technical Specifications

Diodes & Rectifiers STTH8R06G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.045 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH8R06G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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