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STTH8R04G

STMicroelectronics

STTH8R04G by STMicroelectronics

STTH8R04G by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.05 µs and supports up to 8 A output current. It operates at a peak reverse voltage of 400 V and withstands temperatures up to 175 °C. Ideal for high-efficiency applications, it features a compact surface mount design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,267 parts In-Stock

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13,267

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Digiode

USA . 4,020 parts In-Stock

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4,020

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Anansix

USA . 1,629 parts In-Stock

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1,629

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,603 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

$0.087

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1,603

$0.097

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$0.087

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MKK Technologies

India . 2,001 parts In-Stock

1+ parts

$0.182

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2,001

$0.182

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DigiPath Technology Company

USA . 2,001 parts In-Stock

1+ parts

$0.182

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2,001

$0.182

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AZTECH Wire

Italy . 884 parts In-Stock

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$15.650

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884

$15.650

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Component Stockers USA

USA . 601 parts In-Stock

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$99.990

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601

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,148 parts In-Stock

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5,148

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Corphita

USA . 3,990 parts In-Stock

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3,990

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Parana Technologies

USA . 1,474 parts In-Stock

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$0.116

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1,474

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$0.116

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Overview

Elevate your designs with the STTH8R04G from STMicroelectronics, a leader in semiconductor innovation. This ultra-fast recovery rectifier diode boasts exceptional performance and reliability, ensuring efficient power management in your applications. With its compact surface mount design and robust operating temperature range, it excels in demanding environments. Experience unmatched quality and long-lasting value that enhances efficiency and meets your most stringent requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers excellent insulation and durability, making the diode suitable for various environments and enhancing its reliability in electronic circuits.

Config: SINGLE

The single configuration allows for straightforward integration into designs, simplifying circuit layout and minimizing space requirements.

Surface Mount: YES

Being a surface mount device (SMD) enhances assembly efficiency and allows for higher packing density on PCBs, making it ideal for modern compact electronics.

Maximum Reverse Recovery Time: 0.05 us

A fast reverse recovery time of 0.05 microseconds enables efficient switching performance, reducing energy loss and enhancing overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular package shape fits well in standard PCB layouts, allowing for better alignment and efficient use of board space.

No. of Terminals: 2

With only two terminals, this diode simplifies connections in the circuit, making it easier to use while reducing potential points of failure.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for high-density applications, providing flexibility in compact design scenarios.

Application: ULTRA FAST RECOVERY

The ultra-fast recovery characteristic is ideal for high-frequency applications, improving overall circuit performance and responsiveness.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode is suitable for demanding applications, ensuring reliable operation in harsh environments.

Terminal Finish: MATTE TIN

The matte tin finish offers excellent solderability and corrosion resistance, ensuring long-term reliability and performance in assembly processes.

Terminal Position: SINGLE

A single terminal position simplifies circuit design, facilitating easier integration into various applications while maintaining a compact footprint.

Case Connection: CATHODE

The cathode connection is standard in rectifier circuits, making it easier to implement in various rectifying configurations.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component effectively converts AC to DC, making it essential for power supply designs and many electronic applications.

Maximum Forward Voltage (VF): 1.1 V

A low maximum forward voltage drop of 1.1 V ensures efficient operation with minimal power loss, which is crucial for energy-conscious designs.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode can handle substantial load currents, likely making it suitable for various demanding applications.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability and facilitates easier automated assembly processes, thus improving manufacturing efficiency.

Maximum Repetitive Peak Reverse Voltage: 400 V

Withstanding a high repetitive peak reverse voltage of 400 V allows for safe operation in high-voltage applications, enhancing design flexibility.

Maximum Non Repetitive Peak Forward Current: 120 A

The capability to handle a peak forward current of 120 A provides durability against voltage spikes, ensuring robust performance and reliability in transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material enhances the component's overall efficiency, thermal stability, and performance in various electronic applications.

Technical Specifications

Diodes & Rectifiers STTH8R04G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH8R04G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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