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STTH812G

STMicroelectronics

STTH812G by STMicroelectronics

STTH812G by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode, ideal for applications requiring rapid switching. It features a max reverse recovery time of 0.1 µs, supports up to 1200 V, and operates at temperatures up to 175 °C. This surface-mount device offers excellent performance with an output current of 8 A.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 53,000 parts In-Stock

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Chip Stock

USA . 23,500 parts In-Stock

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Vyrian

USA . 2,666 parts In-Stock

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Digiode

USA . 2,102 parts In-Stock

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Anansix

USA . 1,701 parts In-Stock

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Connect4Technologies Inc.

Canada . 90 parts In-Stock

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90

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EMSNET

USA . 69 parts In-Stock

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69

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Connector Distribution Corp

USA . 12 parts In-Stock

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Right Parts Inc.

USA . 11 parts In-Stock

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Zilex Electronics Inc.

Canada . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 894 parts In-Stock

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$0.009

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$0.008

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894

$0.009

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$0.008

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MKK Technologies

India . 1,121 parts In-Stock

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$0.017

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$0.017

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DigiPath Technology Company

USA . 1,121 parts In-Stock

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$0.017

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AZTECH Wire

Italy . 823 parts In-Stock

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$19.300

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Component Stockers USA

USA . 619 parts In-Stock

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$99.990

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Parana Technologies

USA . 2,198 parts In-Stock

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Corphita

USA . 1,853 parts In-Stock

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Perfect Parts

USA . 560 parts In-Stock

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Overview

Unlock unparalleled performance with the STTH812G from STMicroelectronics, a high-voltage ultra-fast soft recovery diode designed to elevate your applications. Renowned for quality and innovation, STMicroelectronics delivers reliability that engineers trust. Experience reduced power loss and enhanced efficiency, making this diode ideal for demanding environments. Elevate your projects with proven technology that empowers your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures protection against environmental factors, making the diode reliable for various applications.

Config: SINGLE

A single configuration simplifies integration into circuits, which is ideal for compact designs.

Surface Mount: YES

Surface mounting allows for automated assembly processes, reducing manufacturing costs and improving efficiency.

Maximum Reverse Recovery Time: 0.1 us

A low reverse recovery time enhances switching performance, making it suitable for high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on the PCB, facilitating more efficient circuit layouts.

No. of Terminals: 2

Two terminals make for straightforward connections and simplicity in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package enables high-density design, maximizing use of available space on PCBs.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Designed for high voltage and fast recovery, making it suitable for applications needing quick charge and discharge cycles.

Maximum Operating Temperature: 175 °C

A high operating temperature rating allows for use in demanding environments, ensuring reliability in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, extending product lifespan and performance.

Terminal Position: SINGLE

A single terminal position simplifies mounting and soldering for easier implementation in designs.

Case Connection: CATHODE

Cathode connection promotes compatibility with standard circuit designs, ensuring ease of integration.

Maximum Time At Peak Reflow Temperature (s): 30

This specification indicates compatibility with lead-free soldering processes, making it suitable for modern manufacturing practices.

Peak Reflow Temperature (°C): 245

A peak reflow temperature of 245 °C accommodates the latest soldering techniques, ensuring stable joint integrity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, essential for power supply applications.

Maximum Forward Voltage (VF): 1.9 V

A lower forward voltage enhances energy efficiency during operation, reducing heat generation and improving overall performance efficiency.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode can support high-power applications effectively.

Terminal Form: GULL WING

The gull wing design facilitates secure connections and effective heat dissipation, promoting reliable operation.

Maximum Repetitive Peak Reverse Voltage: 1200 V

A high peak reverse voltage rating makes the diode suitable for high-voltage applications, ensuring safety and reliability.

Maximum Non-Repetitive Peak Forward Current: 80 A

The capability to handle high non-repetitive forward currents enhances the diode's robustness for transient conditions.

Diode Element Material: SILICON

Silicon as the semiconductor material provides excellent electrical characteristics, making it ideal for high-efficiency applications.

Technical Specifications

Diodes & Rectifiers STTH812G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH812G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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