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STTH810G

STMicroelectronics

STTH810G by STMicroelectronics

STTH810G by STMicroelectronics is a single rectifier diode with 1000V peak reverse voltage and 8A output current. It features 0.085us reverse recovery time, suitable for high voltage ultra-fast soft recovery applications. The diode has a max forward voltage of 1.7V and operates at temperatures up to 175°C in a small outline package ideal for surface mount assembly.

Median Price

$3.080

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 84 parts In-Stock

1+ parts

$3.080

100+ parts

$2.310

1k+ parts

$2.000

10k+ parts

-

84

$3.080

$2.310

$2.000

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Vyrian

USA . 3,434 parts In-Stock

1+ parts

-

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3,434

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Anansix

USA . 2,112 parts In-Stock

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2,112

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Digiode

USA . 1,660 parts In-Stock

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1,660

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Euro-Tech

UK . 1,485 parts In-Stock

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1,485

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Nova Conductors

Japan . 150 parts In-Stock

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150

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ComSIT Distribution GmbH

Germany . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 936 parts In-Stock

1+ parts

$0.010

100+ parts

-

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936

$0.010

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IDEA Electronic Components Group

UK . 1,660 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

$0.082

10k+ parts

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1,660

$0.091

-

$0.082

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MKK Technologies

India . 994 parts In-Stock

1+ parts

$0.171

100+ parts

-

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994

$0.171

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DigiPath Technology Company

USA . 994 parts In-Stock

1+ parts

$0.171

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994

$0.171

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AZTECH Wire

Italy . 350 parts In-Stock

1+ parts

$15.666

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350

$15.666

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A-Z Elektronik GmbH

Germany . 5,168 parts In-Stock

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5,168

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Continental Prestige Electronics

USA . 4,855 parts In-Stock

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Corphita

USA . 4,757 parts In-Stock

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Argo Parts USA

USA . 2,761 parts In-Stock

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2,761

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Parana Technologies

USA . 1,114 parts In-Stock

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$0.109

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1,114

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$0.109

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Discover the high-quality STTH810G diode by STMicroelectronics, designed for high voltage ultra-fast soft recovery applications. With its single configuration and maximum output current of 8A, this rectifier diode offers superior performance and reliability. Its matte tin terminal finish ensures durability while the small outline package style makes it easy to integrate into your projects. Trust in STMicroelectronics' expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Upgrade your designs with the STTH810G and experience the benefits of its advanced technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and reliability of the diode in various operating conditions.

Config: SINGLE

Being a single configuration makes this diode easy to install and suitable for applications where only one diode is required.

Surface Mount: YES

The surface mount feature makes this diode suitable for compact designs and allows for easy integration onto circuit boards.

Maximum Reverse Recovery Time: 0.085 us

With a fast reverse recovery time, this diode is ideal for high-speed switching applications.

Package Shape: RECTANGULAR

The rectangular shape of the package provides efficient use of space and allows for easy placement on a circuit board.

No. of Terminals: 2

With two terminals, this diode is easy to connect and install in a circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this diode suitable for applications where space is limited.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Designed for high voltage applications with ultra-fast soft recovery, this diode ensures efficient and reliable operation.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this diode can withstand high temperatures, making it suitable for a variety of industrial applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and solderability, ensuring a secure connection in the circuit.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures consistent performance in the circuit.

Case Connection: CATHODE

The cathode case connection design offers easy identification and installation of the diode in the circuit.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is capable of converting alternating current to direct current efficiently.

Maximum Forward Voltage (VF): 1.7 V

With a low forward voltage drop of 1.7V, this diode helps minimize power losses in the circuit.

Maximum Output Current: 8 A

The high output current capability of 8A allows this diode to handle high current loads effectively.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and easy installation on a circuit board.

Maximum Repetitive Peak Reverse Voltage: 1000 V

With a high repetitive peak reverse voltage of 1000V, this diode is suitable for high voltage applications.

Maximum Non-Repetitive Peak Forward Current: 60 A

The high non-repetitive peak forward current rating of 60A ensures reliable performance in transient conditions.

Diode Element Material: SILICON

Made of silicon, this diode offers high efficiency, low power losses, and reliable performance in various applications.

Technical Specifications

Diodes & Rectifiers STTH810G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH810G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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