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STTH80S06W

STMicroelectronics

STTH80S06W by STMicroelectronics

STTH80S06W by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, ideal for demanding applications. It features a max reverse recovery time of 0.075 µs, 600 V peak reverse voltage, and operates b/w -40 °C to 175 °C. Its flange mount design ensures reliable performance in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,652 parts In-Stock

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7,652

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Digiode

USA . 3,208 parts In-Stock

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3,208

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Anansix

USA . 1,038 parts In-Stock

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1,038

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 767 parts In-Stock

1+ parts

$0.028

100+ parts

-

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$0.025

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767

$0.028

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$0.025

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MKK Technologies

India . 2,070 parts In-Stock

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$0.052

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2,070

$0.052

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DigiPath Technology Company

USA . 2,070 parts In-Stock

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$0.052

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2,070

$0.052

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AZTECH Wire

Italy . 1,130 parts In-Stock

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$9.290

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1,130

$9.290

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QUARKTWIN TECHNOLOGY LTD

USA . 28,031 parts In-Stock

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28,031

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Corphita

USA . 1,630 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 840 parts In-Stock

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840

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Parana Technologies

USA . 187 parts In-Stock

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$0.033

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187

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$0.033

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Overview

Unlock the power of efficiency with the STTH80S06W from STMicroelectronics, a trusted leader in semiconductor innovation. This high-voltage ultra-fast recovery rectifier diode ensures exceptional performance across diverse applications, delivering reliability even in extreme conditions. With a robust design and superior thermal handling, it guarantees longevity and minimal downtime, making it an ideal choice for demanding environments. Experience quality that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making this diode suitable for various applications.

Config: SINGLE

The single configuration allows for straightforward integration into circuits, providing efficiency and simplicity in design.

Maximum Reverse Recovery Time: 0.075 us

A fast reverse recovery time enhances switching performance, making this diode ideal for high-frequency applications.

Maximum Reverse Current: 50 uA

Low reverse current contributes to energy efficiency and minimizes power loss, making it a suitable choice for energy-sensitive applications.

Package Shape: RECTANGULAR

The rectangular package shape promotes effective space utilization on PCB layouts, allowing for compact designs.

No. of Terminals: 2

Having two terminals simplifies connections and helps in easy integration into various circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides robust mechanical support, ensuring stability during operations and ease of mounting.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage and ultra fast recovery applications, it is reliable in demanding environments and improves overall circuit performance.

Maximum Operating Temperature: 175 °C

The high operating temperature rating supports reliability in extreme conditions, making this diode suitable for harsh environments.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures extends the range of applications in diverse environments, including cold climates.

Terminal Position: SINGLE

A single terminal position allows for easy layout in circuit designs, enhancing manufacturability and integration into systems.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, catering to a wide range of power supply and rectification applications.

Maximum Forward Voltage (VF): 2.2 V

A low maximum forward voltage drop ensures minimal power loss during operation, improving energy efficiency in circuits.

Maximum Repetitive Peak Reverse Voltage: 600 V

This high voltage rating allows for versatility in high voltage applications, making the diode suitable for rugged industrial use.

Maximum Non Repetitive Peak Forward Current: 400 A

The capability to handle high forward currents makes this diode ideal for high-power applications, ensuring reliable performance under load.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent thermal conductivity and reliability, contributing to the diode's overall performance and lifespan.

Technical Specifications

Diodes & Rectifiers STTH80S06W attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, SOFT FACTOR IS 0.4

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.2 V

JEDEC-95 Code:

DO-247

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH80S06W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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