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STTH802G

STMicroelectronics

STTH802G by STMicroelectronics

STTH802G by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and can handle up to 8 A output current. It operates at a max temp of 175 °C and features a compact surface mount design. Ideal for high-efficiency applications.

Median Price

$1.415

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2 parts In-Stock

1+ parts

$0.980

100+ parts

$0.980

1k+ parts

$0.796

10k+ parts

$0.681

2

$0.980

$0.980

$0.796

$0.681

DigiKey

USA . 4 parts In-Stock

1+ parts

$1.850

100+ parts

-

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-

10k+ parts

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4

$1.850

-

-

-

Distributors (In-Stock)

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Digiode

USA . 2,528 parts In-Stock

1+ parts

$0.931

100+ parts

-

1k+ parts

-

10k+ parts

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2,528

$0.931

-

-

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Vyrian

USA . 8,280 parts In-Stock

1+ parts

-

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8,280

-

-

-

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ComSIT Distribution GmbH

Germany . 1,800 parts In-Stock

1+ parts

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1,800

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Anansix

USA . 462 parts In-Stock

1+ parts

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462

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Inventory MP

USA . 237 parts In-Stock

1+ parts

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237

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Bristol Electronics

USA . 237 parts In-Stock

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237

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,862 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

$0.019

10k+ parts

-

1,862

$0.021

-

$0.019

-

MKK Technologies

India . 1,853 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

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1,853

$0.040

-

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DigiPath Technology Company

USA . 1,853 parts In-Stock

1+ parts

$0.040

100+ parts

-

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1,853

$0.040

-

-

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Corphita

USA . 4,989 parts In-Stock

1+ parts

$0.882

100+ parts

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4,989

$0.882

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QUARKTWIN TECHNOLOGY LTD

USA . 28,826 parts In-Stock

1+ parts

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28,826

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Perfect Parts

USA . 21,716 parts In-Stock

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21,716

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Assy Fe

Spain . 13,600 parts In-Stock

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13,600

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Kepictronics

USA . 9,800 parts In-Stock

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9,800

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A-Z Elektronik GmbH

Germany . 6,627 parts In-Stock

1+ parts

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6,627

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Parana Technologies

USA . 1,432 parts In-Stock

1+ parts

-

100+ parts

$0.025

1k+ parts

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10k+ parts

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1,432

-

$0.025

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Metaverse IC Inc.

Canada . 300 parts In-Stock

1+ parts

-

100+ parts

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300

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Overview

Unlock unparalleled performance with the STTH802G from STMicroelectronics, a leader in innovative semiconductor solutions. This ultra-fast recovery rectifier diode excels in demanding applications, ensuring reliability and efficiency up to 175 °C. With its compact design and robust capabilities, it perfectly meets your needs for high-speed circuits. Trust in ST's commitment to quality and elevate your projects with cutting-edge technology that delivers lasting value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, ensuring reliability in various applications.

Config: SINGLE

A single configuration simplifies integration in circuits, reducing space requirements and complexity.

Surface Mount: YES

Surface mount capability allows for easier and more efficient manufacturing processes, ideal for modern electronic assemblies.

Maximum Reverse Recovery Time: 0.03 us

Ultra-fast recovery time enhances switching performance, making it suitable for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient PCB design and placement, optimizing space utilization.

No. of Terminals: 2

Having only two terminals simplifies the connection points, reducing the chances of installation errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style is ideal for compact designs, making it suitable for space-constrained applications.

Application: ULTRA FAST RECOVERY

Specifically designed for ultra-fast recovery, it enhances efficiency in AC to DC conversion and rectification processes.

Maximum Operating Temperature: 175 °C

High operating temperature rating signifies reliability and performance in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring robust connections.

Terminal Position: SINGLE

Single terminal position allows for straightforward and intuitive circuit design.

Case Connection: CATHODE

The cathode connection design simplifies integration with other components in circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC signals to DC, crucial for power supply circuits.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop improves efficiency by minimizing power loss in rectification applications.

Maximum Output Current: 8 A

With a maximum output current of 8 A, it can handle significant loads, making it versatile for various applications.

Terminal Form: GULL WING

Gull wing terminals facilitate efficient soldering, ensuring strong mechanical and electrical connections.

Maximum Repetitive Peak Reverse Voltage: 200 V

High peak reverse voltage rating makes this diode suitable for a wide range of high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 100 A

The ability to handle high surge currents ensures reliability during transient events, an important feature for robust designs.

Diode Element Material: SILICON

Silicon as a diode element material offers excellent electrical characteristics and reliability, widely regarded in the industry.

Technical Specifications

Diodes & Rectifiers STTH802G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH802G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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