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STTH602CFP

STMicroelectronics

STTH602CFP by STMicroelectronics

STTH602CFP by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and supports up to 3 A output current. It features a common cathode configuration in a flange mount package. Ideal for high-efficiency applications, it operates at temperatures up to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,601 parts In-Stock

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5,601

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Digiode

USA . 1,576 parts In-Stock

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1,576

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Anansix

USA . 790 parts In-Stock

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790

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,235 parts In-Stock

1+ parts

$0.119

100+ parts

-

1k+ parts

$0.107

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1,235

$0.119

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$0.107

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MKK Technologies

India . 2,187 parts In-Stock

1+ parts

$0.223

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2,187

$0.223

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DigiPath Technology Company

USA . 2,187 parts In-Stock

1+ parts

$0.223

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2,187

$0.223

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AZTECH Wire

Italy . 159 parts In-Stock

1+ parts

$16.860

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159

$16.860

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A-Z Elektronik GmbH

Germany . 4,536 parts In-Stock

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4,536

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Corphita

USA . 4,242 parts In-Stock

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4,242

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Parana Technologies

USA . 2,035 parts In-Stock

1+ parts

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$0.142

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2,035

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$0.142

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Overview

Elevate your designs with the STTH602CFP diode from STMicroelectronics, a leader in semiconductor innovation. Engineered for ultra-fast recovery, this robust rectifier diode excels in demanding applications, ensuring high efficiency and reliability even in extreme conditions. With superior quality and a commitment to excellence, STMicroelectronics delivers unparalleled value, making the STTH602CFP an essential component for powering your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection against environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with two elements enhances versatility in circuit design, allowing for better layout flexibility.

Maximum Reverse Recovery Time: 0.03 µs

A maximum reverse recovery time of 0.03 µs makes this diode ideal for high-speed applications, reducing switching losses.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCB, allowing for a compact design in electronic circuits.

No. of Terminals: 3

With three terminals, this diode provides additional connection options for enhanced circuit design flexibility.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates easy installation and reliable physical mounting, suitable for robust applications.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery applications, this diode minimizes delays in reverse recovery, providing improved performance in high-speed circuits.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature of 175 °C allows the diode to function reliably in demanding environments without overheating.

Terminal Position: SINGLE

The single terminal position simplifies PCB design and layout for integration into various electronic devices.

Case Connection: ISOLATED

The isolated case connection reduces the risk of short circuits, enhancing safety and reliability in electronic applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.95 V

A maximum forward voltage of 0.95 V ensures low conduction losses, improving overall energy efficiency during operation.

Maximum Output Current: 3 A

With a maximum output current rating of 3 A, this diode is capable of handling substantial load currents in various circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers stronger mechanical support and ease of soldering, leading to reliable electrical connections.

No. of Elements: 2

Having two elements in the diode design enhances its performance and capabilities for various applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high maximum repetitive peak reverse voltage of 200 V allows this diode to withstand significant voltage spikes in circuit applications.

Maximum Non-Repetitive Peak Forward Current: 60 A

The ability to handle a maximum non-repetitive peak forward current of 60 A provides superior surge handling capabilities, ensuring reliability in transient conditions.

Diode Element Material: SILICON

Constructed from silicon, this diode offers excellent electrical properties, making it a reliable choice for a wide range of electronic applications.

Technical Specifications

Diodes & Rectifiers STTH602CFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH602CFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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