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STTH5R06G

STMicroelectronics

STTH5R06G by STMicroelectronics

STTH5R06G by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, ideal for applications requiring quick response times. It features a max reverse recovery time of 0.04 µs, supports up to 600 V, and operates at temperatures up to 175 °C. This surface-mount device offers a compact design with a max output current of 5 A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,886 parts In-Stock

1+ parts

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8,886

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Digiode

USA . 3,734 parts In-Stock

1+ parts

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3,734

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Anansix

USA . 1,777 parts In-Stock

1+ parts

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1,777

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,984 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

$0.017

10k+ parts

-

1,984

$0.019

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$0.017

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MKK Technologies

India . 1,408 parts In-Stock

1+ parts

$0.036

100+ parts

-

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1,408

$0.036

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DigiPath Technology Company

USA . 1,408 parts In-Stock

1+ parts

$0.036

100+ parts

-

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10k+ parts

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1,408

$0.036

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AZTECH Wire

Italy . 1,083 parts In-Stock

1+ parts

$19.190

100+ parts

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1,083

$19.190

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Corphita

USA . 4,553 parts In-Stock

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4,553

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Parana Technologies

USA . 2,106 parts In-Stock

1+ parts

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100+ parts

$0.023

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2,106

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$0.023

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Elevate your designs with the STTH5R06G from STMicroelectronics—where cutting-edge technology meets unmatched reliability. This high-voltage ultra-fast recovery diode enhances performance while ensuring efficiency in various applications, such as power supplies and renewable energy systems. With its robust design and 175 °C operating temperature, it delivers exceptional durability and reliability, making it a trusted choice for engineers seeking quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable package material ensures reliable performance and protection, making it suitable for various applications.

Config: SINGLE

The single configuration allows for simple integration into circuits while providing efficient performance.

Surface Mount: YES

Surface mount capability enhances space efficiency on printed circuit boards and supports automated assembly processes.

Maximum Reverse Recovery Time: 0.04 µs

The ultra-fast recovery time minimizes switching losses, making it an excellent choice for high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape is optimal for PCB layout, allowing for compact and efficient designs.

No. of Terminals: 2

A straightforward two-terminal setup simplifies connections in circuits, enhancing user-friendliness.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports high-density design, critical for modern electronic devices.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage and ultra-fast recovery applications, this diode is ideal for demanding tasks.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows the diode to function reliably in elevated thermal environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and ensures robust connections during assembly.

Terminal Position: SINGLE

Single terminal positioning helps streamline layouts and minimizes the possibility of connection errors.

Case Connection: CATHODE

The cathode connection facilitates easy integration into standard circuits, ensuring predictable behavior.

Maximum Time At Peak Reflow Temperature (s): 30

Allowing a maximum of 30 seconds at peak reflow temperature ensures the diode can endure standard soldering processes.

Peak Reflow Temperature (°C): 245

The high reflow temperature tolerance indicates good thermal stability, suitable for modern manufacturing techniques.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component plays a critical role in converting AC to DC, essential for various power applications.

Maximum Forward Voltage (VF): 1.8 V

A low forward voltage drop enhances efficiency, reducing power loss during operation.

Maximum Output Current: 5 A

The capability to handle up to 5 A makes this diode suitable for moderate power applications.

Terminal Form: GULL WING

The gull wing terminal form allows for reliable mounting and enhances soldering accuracy in surface-mount applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high repetitive peak reverse voltage rating, this diode is ideal for high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 50 A

A high non-repetitive peak forward current rating underscores the diode's ability to handle surges effectively.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical performance and reliability across various applications.

Technical Specifications

Diodes & Rectifiers STTH5R06G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.04 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH5R06G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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