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STTH506TTI

STMicroelectronics

STTH506TTI by STMicroelectronics

STTH506TTI by STMicroelectronics is a hyper fast recovery rectifier diode with a max reverse recovery time of 0.025 µs and can handle up to 5 A output current. It operates at a max temp of 150 °C and features a flange mount design. Ideal for high-efficiency applications, it supports up to 600 V peak reverse voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,520 parts In-Stock

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7,520

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Digiode

USA . 3,535 parts In-Stock

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3,535

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Anansix

USA . 2,275 parts In-Stock

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2,275

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Bristol Electronics

USA . 15 parts In-Stock

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15

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Atlantic Semiconductor

USA . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 202 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

$0.095

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202

$0.106

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$0.095

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MKK Technologies

India . 1,644 parts In-Stock

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$0.199

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1,644

$0.199

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DigiPath Technology Company

USA . 1,644 parts In-Stock

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$0.199

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1,644

$0.199

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AZTECH Wire

Italy . 742 parts In-Stock

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$18.940

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742

$18.940

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Corphita

USA . 4,599 parts In-Stock

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4,599

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Parana Technologies

USA . 1,646 parts In-Stock

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$0.126

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1,646

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$0.126

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Overview

Unlock the power of innovation with the STTH506TTI from STMicroelectronics, a leader in semiconductor solutions. This hyper fast recovery diode is designed for optimal efficiency, ensuring superior performance in demanding applications. Crafted with precision and reliability in mind, STMicroelectronics guarantees industry-leading quality, making this diode perfect for your rectification needs. Experience enhanced durability, impressive thermal management, and seamless integration into your projects, driving your success forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent insulation, durability, and thermal stability, making it suitable for various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration allows for efficient power management and ensures better performance in rectification circuits.

Maximum Reverse Recovery Time: 0.025 µs

A low reverse recovery time enhances efficiency in high-speed applications, reducing energy loss.

Package Shape: RECTANGULAR

The rectangular shape allows for versatile placement and integration within different circuit layouts.

No. of Terminals: 3

Three terminals provide additional connectivity options for improved circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mounting increases stability and makes it convenient for secure installation in various devices.

Application: HYPER FAST RECOVERY

Designed specifically for hyper fast recovery applications, ensuring minimal energy loss and high-speed switching capabilities.

Maximum Operating Temperature: 150 °C

A high operating temperature rating allows for reliable performance in demanding and high-temperature environments.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and provides good corrosion resistance, ensuring lasting connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design, allowing for easier integration into existing systems.

Case Connection: ISOLATED

Isolated case connections enhance safety by reducing the risk of short circuits and improving device reliability.

Maximum Power Dissipation: 17 W

A maximum power dissipation rating of 17 W indicates robust performance, handling higher loads without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 2.6 V

A relatively low forward voltage drop minimizes energy loss during operation, enhancing overall efficiency.

Maximum Output Current: 5 A

The ability to handle up to 5 A output current ensures that it meets the demands of a variety of applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables robust mechanical stability and makes it easier to handle during assembly.

No. of Elements: 2

Having two elements improves the rectification process and allows for more efficient current flow.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating indicates this diode can withstand considerable voltage spikes, enhancing reliability.

Maximum Non-Repetitive Peak Forward Current: 60 A

With a peak forward current rating of 60 A, this diode can handle significant surge currents, making it suitable for peak load conditions.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical performance and reliability in various applications.

Technical Specifications

Diodes & Rectifiers STTH506TTI attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HYPER FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.6 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

17 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.025 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH506TTI Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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