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STTH4L06Q

STMicroelectronics

STTH4L06Q by STMicroelectronics

STTH4L06Q by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.075 µs and can handle up to 4 A output current. It operates at temperatures up to 175 °C and features a round, long-form package. Ideal for high-efficiency power applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,272 parts In-Stock

1+ parts

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4,272

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Anansix

USA . 2,093 parts In-Stock

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2,093

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Digiode

USA . 430 parts In-Stock

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430

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,694 parts In-Stock

1+ parts

$0.123

100+ parts

-

1k+ parts

$0.111

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1,694

$0.123

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$0.111

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MKK Technologies

India . 1,409 parts In-Stock

1+ parts

$0.232

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1,409

$0.232

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DigiPath Technology Company

USA . 1,409 parts In-Stock

1+ parts

$0.232

100+ parts

-

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1,409

$0.232

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AZTECH Wire

Italy . 637 parts In-Stock

1+ parts

$21.830

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637

$21.830

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QUARKTWIN TECHNOLOGY LTD

USA . 7,170 parts In-Stock

1+ parts

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7,170

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Corphita

USA . 1,986 parts In-Stock

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1,986

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Parana Technologies

USA . 214 parts In-Stock

1+ parts

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$0.147

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214

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$0.147

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Overview

Unlock unparalleled efficiency and reliability with the STTH4L06Q rectifier diode from STMicroelectronics. Renowned for its exceptional quality, this powerhouse is designed to thrive in demanding applications while delivering superior performance under high temperatures. With a robust build and rapid recovery time, it ensures maximized energy flow, making it ideal for power management and converter designs. Elevate your projects with a component that embodies innovation and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability and long-lasting performance in various environmental conditions.

Config: SINGLE

A single configuration reduces complexity and makes it easier to integrate into various circuits.

Maximum Reverse Recovery Time: 0.075 us

This short recovery time minimizes switching losses, making it efficient for high-frequency applications.

Package Shape: ROUND

The round package shape allows for efficient thermal management and easy placement in circuit layouts.

No. of Terminals: 2

Having only two terminals simplifies connections and reduces potential points of failure.

Package Style (Meter): LONG FORM

The long form style provides greater flexibility in placement and soldering, ideal for various PCB designs.

Maximum Operating Temperature: 175 °C

High operating temperature capability ensures reliability in demanding applications and environments.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and resilience against corrosion.

Terminal Position: AXIAL

Axial terminal positioning allows for easy integration into a variety of circuit designs.

Case Connection: ISOLATED

Isolated connections prevent unwanted electrical interactions, ensuring improved circuit integrity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed to efficiently convert AC to DC, making it versatile for power supply applications.

Maximum Forward Voltage (VF): 1.05 V

Low forward voltage drop ensures minimal power loss during operation, enhancing overall efficiency.

Maximum Output Current: 4 A

The capacity to handle up to 4 A makes it suitable for a wide range of applications, from low to medium power.

Terminal Form: WIRE

Wire form terminals offer flexibility in connection and layout, making it easy to incorporate into various designs.

Maximum Repetitive Peak Reverse Voltage: 600 V

High voltage rating allows it to be used in high-voltage environments, increasing its versatility.

Maximum Non Repetitive Peak Forward Current: 80 A

Ability to handle peak currents up to 80 A ensures robustness in transient conditions.

Diode Element Material: SILICON

Silicon as a diode element material provides excellent performance characteristics and reliability.

Technical Specifications

Diodes & Rectifiers STTH4L06Q attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH4L06Q Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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