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STTH3L06B

STMicroelectronics

STTH3L06B by STMicroelectronics

STTH3L06B by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, ideal for applications requiring quick response. It features a max reverse recovery time of 0.085 µs, supports up to 600 V peak reverse voltage, and operates at 175 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,358 parts In-Stock

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6,358

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Digiode

USA . 3,328 parts In-Stock

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3,328

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Anansix

USA . 349 parts In-Stock

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349

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 920 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

$0.046

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-

920

$0.052

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$0.046

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MKK Technologies

India . 78 parts In-Stock

1+ parts

$0.097

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78

$0.097

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DigiPath Technology Company

USA . 78 parts In-Stock

1+ parts

$0.097

100+ parts

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78

$0.097

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AZTECH Wire

Italy . 198 parts In-Stock

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$9.660

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198

$9.660

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Component Stockers USA

USA . 614 parts In-Stock

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$99.990

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614

$99.990

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Corphita

USA . 2,642 parts In-Stock

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2,642

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Parana Technologies

USA . 1,251 parts In-Stock

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$0.062

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1,251

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$0.062

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Overview

Unlock the power of reliability with the STTH3L06B from STMicroelectronics—your go-to solution for high-voltage ultra-fast recovery applications. Designed for excellence, this surface-mount rectifier diode ensures superior performance in demanding environments, boasting a robust operating temperature up to 175 °C. With STMicroelectronics' renowned quality, you can trust this component to deliver efficiency and durability, making it perfect for various electronic systems. Elevate your projects and experience unmatched value today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection against environmental factors, making this diode reliable in various applications.

Config: SINGLE

A single configuration is ideal for applications requiring straightforward diode functionality without the complexity of multiple components.

Surface Mount: YES

Surface mount capability enables easy integration into compact electronic designs, catering to modern PCB layouts and reducing assembly time.

Maximum Reverse Recovery Time: 0.085 µs

With a low reverse recovery time, this diode is well-suited for high-speed applications, minimizing switching losses and improving efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient space utilization on PCBs, facilitating higher density designs.

No. of Terminals: 2

Having two terminals makes this diode easy to connect in a variety of circuit configurations, simplifying design and installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact footprint, essential for space-constrained applications in consumer electronics.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage ultra-fast recovery applications, this diode provides exceptional performance in critical circuit environments.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature rating enhances reliability and performance in demanding thermal environments, ensuring longevity.

Terminal Finish: MATTE TIN

The matte tin terminal finish improves solderability and corrosion resistance, facilitating reliable connections in manufacturing and field use.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and installation, making it user-friendly for engineers and technicians alike.

Case Connection: CATHODE

With a cathode case connection design, this diode provides clear orientation in circuits, reducing the chances of incorrect installation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), vital for power supply applications.

Maximum Forward Voltage (VF): 1.05 V

A low forward voltage drop (VF) enhances energy efficiency, minimizing power losses during operation in rectification applications.

Maximum Output Current: 3 A

Capable of handling a maximum output current of 3 A, this diode meets the demands of various medium power applications effectively.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability during soldering, ensuring a robust connection on the PCB.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high peak reverse voltage rating of 600 V, this diode is suitable for high-voltage applications, providing reliability and safety.

Maximum Non-Repetitive Peak Forward Current: 40 A

Capable of withstanding high non-repetitive peak forward currents, this diode is ideal for surge applications, adding to its versatility.

Diode Element Material: SILICON

Manufactured from silicon, this diode exhibits excellent electrical properties, ensuring reliable performance and efficiency in diverse applications.

Technical Specifications

Diodes & Rectifiers STTH3L06B attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH3L06B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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