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STTH30R06D

STMicroelectronics

STTH30R06D by STMicroelectronics

STTH30R06D by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.07 µs and handling up to 30 A output current. It operates at temperatures up to 175 °C with a peak reverse voltage of 600 V. Ideal for applications requiring efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,541 parts In-Stock

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Digiode

USA . 4,103 parts In-Stock

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4,103

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Anansix

USA . 2,633 parts In-Stock

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2,633

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Global Solutions Electronics Company

USA . 75 parts In-Stock

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75

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Sunrise Surplus Inc.

USA . 19 parts In-Stock

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IDEA Electronic Components Group

UK . 248 parts In-Stock

1+ parts

$0.177

100+ parts

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$0.159

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248

$0.177

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$0.159

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MKK Technologies

India . 1,190 parts In-Stock

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$0.332

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1,190

$0.332

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DigiPath Technology Company

USA . 1,190 parts In-Stock

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$0.332

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1,190

$0.332

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AZTECH Wire

Italy . 344 parts In-Stock

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$15.230

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344

$15.230

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,047 parts In-Stock

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Corphita

USA . 2,513 parts In-Stock

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2,513

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Parana Technologies

USA . 1,028 parts In-Stock

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$0.211

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1,028

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$0.211

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A-Z Elektronik GmbH

Germany . 330 parts In-Stock

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Overview

Unlock superior performance with the STTH30R06D diode from STMicroelectronics, a trusted leader in innovation. Engineered for high-voltage applications, this ultra-fast recovery rectifier ensures efficiency and reliability, minimizing downtime in critical systems. Its robust design easily handles extreme conditions, making it ideal for industrial and consumer electronics alike. Experience peace of mind and enhanced productivity with a component that truly delivers quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers excellent durability and resistance to environmental factors, ensuring long-term reliability in various applications.

Config: SINGLE

A single configuration simplifies integration into circuits, making it ideal for various applications where space is limited.

Maximum Reverse Recovery Time: 0.07 us

A fast reverse recovery time enhances the efficiency of switching applications, reducing energy losses and improving overall performance.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCB layouts, making it easier to incorporate into diverse circuit designs.

No. of Terminals: 2

Having only two terminals simplifies the design and installation process, making it a versatile choice for a range of circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides stable mounting options, which is beneficial for enhancing the mechanical robustness of the diode in application.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage and ultra-fast recovery applications, this diode is perfect for demanding environments that require rapid switching and high reliability.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature rating ensures reliability and performance in high-heat applications, allowing it to perform where many other components may fail.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, ensuring lasting performance in various environmental conditions.

Terminal Position: SINGLE

The single terminal position aids in straightforward PCB design and facilitates easy connections to the circuit.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is used to convert alternating current (AC) to direct current (DC), crucial for a wide range of electronic applications.

Maximum Forward Voltage (VF): 1.4 V

Low forward voltage drop allows for higher efficiency and reduced power loss during operation, making it suitable for energy-sensitive applications.

Maximum Output Current: 30 A

With a maximum output current of 30A, this diode can handle substantial loads, making it ideal for high-power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enhances mechanical stability and allows for better thermal management, making it suitable for high-reliability applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage capability ensures reliability in high-voltage applications, safeguarding against breakdown.

Maximum Non Repetitive Peak Forward Current: 160 A

The ability to handle a peak forward current of 160A means that this diode can tolerate short bursts of high current, accommodating transient conditions effectively.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties, making this diode suitable for a wide range of electronic circuits.

Technical Specifications

Diodes & Rectifiers STTH30R06D attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.07 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH30R06D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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