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STTH30L06CG

STMicroelectronics

STTH30L06CG by STMicroelectronics

STTH30L06CG by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.085 µs and a peak repetitive reverse voltage of 600 V. It operates at up to 175 °C with a forward voltage drop of just 1.2 V. Ideal for applications requiring efficient power management in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,159 parts In-Stock

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7,159

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Digiode

USA . 2,189 parts In-Stock

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2,189

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QIE Inc.

USA . 849 parts In-Stock

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849

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Anansix

USA . 522 parts In-Stock

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522

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LIBRA Elektronik GmbH

Germany . 52 parts In-Stock

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ComSIT Distribution GmbH

Germany . 13 parts In-Stock

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IDEA Electronic Components Group

UK . 2,173 parts In-Stock

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$0.012

100+ parts

-

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$0.011

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2,173

$0.012

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$0.011

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MKK Technologies

India . 2,173 parts In-Stock

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$0.022

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2,173

$0.022

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DigiPath Technology Company

USA . 2,173 parts In-Stock

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$0.022

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2,173

$0.022

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AZTECH Wire

Italy . 125 parts In-Stock

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$10.120

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125

$10.120

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Component Stockers USA

USA . 262 parts In-Stock

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$99.990

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$99.990

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RC Electronics

USA . 14,000 parts In-Stock

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14,000

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A-Z Elektronik GmbH

Germany . 270 parts In-Stock

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270

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Parana Technologies

USA . 261 parts In-Stock

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$0.014

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261

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$0.014

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Corphita

USA . 136 parts In-Stock

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Overview

Elevate your projects with the STTH30L06CG from STMicroelectronics, a leader in high-performance semiconductor solutions. This ultra-fast recovery diode ensures superior efficiency and reliability, perfect for demanding applications like power supplies and motor drives. With robust thermal performance and a compact design, it stands out in quality and longevity, providing exceptional value that enhances your system's resilience and boosts productivity. Experience the advantage of innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Robust and durable material ensures reliability in various operating environments.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for easier integration in circuits requiring high current management.

Surface Mount: YES

Supports modern manufacturing processes, enabling efficient production and reduced assembly costs.

Maximum Reverse Recovery Time: 0.085 µs

Ultra-fast recovery time minimizes reverse recovery losses, enhancing efficiency in high-speed applications.

Package Shape: RECTANGULAR

Optimized shape for space-saving designs while providing effective thermal dissipation.

No. of Terminals: 2

Simple design with only two terminals facilitates easy circuit integration.

Package Style (Meter): SMALL OUTLINE

Compact footprint suitable for high-density PCBs and space-constrained applications.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Ideal for high voltage applications, providing reliable performance in demanding conditions.

Maximum Operating Temperature: 175 °C

High thermal tolerance ensures functionality in extreme temperature environments, enhancing reliability.

Terminal Finish: Matte Tin (Sn) - annealed

Provides excellent solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Defined terminal position simplifies the design and assembly process, ensuring accurate placement.

Case Connection: CATHODE

Standard connection configuration makes it versatile for various circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Adheres to stringent reflow soldering standards, ensuring the integrity of the component during assembly.

Peak Reflow Temperature (°C): 245

Designed to withstand high temperatures, providing reliability during the reflow soldering process.

Diode Type: RECTIFIER DIODE

Purpose-built for converting AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop enhances energy efficiency in power conversion applications.

Maximum Output Current: 20 A

High current rating allows it to handle substantial loads, suitable for a variety of power applications.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and stable electrical performance.

No. of Elements: 2

Dual elements enhance performance by improving current handling and heat dissipation.

Maximum Repetitive Peak Reverse Voltage: 600 V

High voltage rating ensures reliability in high-voltage applications, protecting against breakdown.

Maximum Non Repetitive Peak Forward Current: 130 A

Robust current handling capability supports surge conditions, ensuring safety and longevity.

Diode Element Material: SILICON

Silicon material provides balanced electrical properties, ensuring efficient operation in various conditions.

Technical Specifications

Diodes & Rectifiers STTH30L06CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH30L06CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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