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STTH2003CG

STMicroelectronics

STTH2003CG by STMicroelectronics

STTH2003CG by STMicroelectronics is a common cathode diode with ultra-fast soft recovery. It has a max output current of 10A, forward voltage of 1.3V, and repetitive peak reverse voltage of 300V. Ideal for applications requiring high-speed rectification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 33,500 parts In-Stock

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Vyrian

USA . 5,248 parts In-Stock

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Anansix

USA . 2,745 parts In-Stock

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Digiode

USA . 895 parts In-Stock

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895

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J2 Sourcing AB

Sweden . 707 parts In-Stock

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707

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,395 parts In-Stock

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$0.053

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$0.048

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1,395

$0.053

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$0.048

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MKK Technologies

India . 661 parts In-Stock

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$0.100

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661

$0.100

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DigiPath Technology Company

USA . 661 parts In-Stock

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$0.100

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661

$0.100

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Continental Prestige Electronics

USA . 504 parts In-Stock

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$0.960

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$0.580

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504

$0.960

$0.580

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AZTECH Wire

Italy . 213 parts In-Stock

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$20.920

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Component Stockers USA

USA . 367 parts In-Stock

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$99.990

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Kepictronics

USA . 27,860 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,295 parts In-Stock

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Corphita

USA . 2,839 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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RC Electronics

USA . 2,358 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 1,960 parts In-Stock

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$0.064

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1,960

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$0.064

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Overview

Get ready to experience top-notch performance with the STTH2003CG diode by STMicroelectronics. Known for their high-quality components, STMicroelectronics delivers reliable products that are perfect for a wide range of applications in the Diodes & Rectifiers category. With ultra-fast soft recovery capabilities and a maximum output current of 10A, this diode provides exceptional value and benefits to customers looking for efficient and durable solutions. Trust STMicroelectronics to deliver excellence in every product, including the STTH2003CG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration into circuit designs.

Surface Mount: YES

Surface mount capability enables easy and efficient installation onto PCBs.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time ensures efficient switching and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy handling and mounting.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the risk of errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting.

Application: ULTRA FAST SOFT RECOVERY

Designed for ultra-fast soft recovery applications, ensuring efficient and reliable performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows for use in various industrial and electronic applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and resistance to corrosion, ensuring secure connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces assembly time.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and provides a common reference point.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering.

Peak Reflow Temperature °C: 245

High peak reflow temperature tolerance ensures proper soldering and long-term reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of alternating current (AC) to direct current (DC).

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop of 1.3V minimizes power loss and improves efficiency.

Maximum Output Current: 10 A

High maximum output current rating of 10A allows for handling of large power loads.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and facilitates automated assembly processes.

No. of Elements: 2

Having 2 elements allows for redundancy and improved reliability in circuit applications.

Maximum Repetitive Peak Reverse Voltage: 300 V

High maximum repetitive peak reverse voltage rating ensures protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 110 A

High maximum non-repetitive peak forward current rating of 110A allows for handling of transient current spikes.

Diode Element Material: SILICON

Silicon diode element material offers high temperature tolerance and reliability for various applications.

Technical Specifications

Diodes & Rectifiers STTH2003CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH2003CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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