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STTH16R04CFP

STMicroelectronics

STTH16R04CFP by STMicroelectronics

STTH16R04CFP by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.05 µs and supports up to 8 A output current. It features a common cathode configuration in a flange mount package. Ideal for high-efficiency applications, it operates at temperatures up to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 6,017 parts In-Stock

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Digiode

USA . 2,772 parts In-Stock

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Anansix

USA . 794 parts In-Stock

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Pegasus Components GmbH

Germany . 140 parts In-Stock

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IDEA Electronic Components Group

UK . 1,316 parts In-Stock

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$0.130

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$0.117

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.160

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$0.146

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$0.131

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40

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MKK Technologies

India . 176 parts In-Stock

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$0.244

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DigiPath Technology Company

USA . 176 parts In-Stock

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$0.244

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AZTECH Wire

Italy . 755 parts In-Stock

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$21.970

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A-Z Elektronik GmbH

Germany . 7,125 parts In-Stock

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Corphita

USA . 2,077 parts In-Stock

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Perfect Parts

USA . 1,482 parts In-Stock

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Parana Technologies

USA . 1,219 parts In-Stock

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$0.155

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Overview

Elevate your designs with the STTH16R04CFP from STMicroelectronics, a standout in ultra-fast recovery rectifier diodes. Renowned for their reliability and innovation, STMicroelectronics ensures top-tier quality that meets the demands of today’s applications, from power supplies to automotive systems. With its compact design and impressive performance under high temperatures, this diode delivers superior efficiency and durability, helping you create robust solutions that stand the test of time. Choose STMicroelectronics for unparalleled value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent thermal stability and moisture resistance, making it suitable for various environments.

Configuration: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design and allows for easier integration into various electronic applications.

Maximum Reverse Recovery Time: 0.05 μs

A low reverse recovery time enhances efficiency and reduces switching losses, ideal for high-speed applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on the PCB, allowing for more compact designs.

Number of Terminals: 3

Having three terminals provides flexible connectivity options, making it compatible with a variety of circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount design ensures secure attachment to the PCB, improving mechanical stability and heat dissipation.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is ideal for applications requiring quick switching, such as power supplies and converters.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can function reliably in demanding environments, increasing its versatility.

Terminal Position: SINGLE

A single terminal position simplifies the mounting process and reduces potential errors during assembly.

Case Connection: ISOLATED

Isolated case connection enhances safety and allows for better insulation, reducing the risk of short circuits.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it indispensable in power conversion applications.

Maximum Forward Voltage (VF): 1.1 V

A low forward voltage drop reduces power loss, enhancing efficiency in circuits where heat generation is a concern.

Maximum Output Current: 8 A

Capable of handling up to 8 A, this diode is suitable for medium to high power applications, ensuring reliable performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support, ensuring a strong connection during operation.

Number of Elements: 2

The dual-element design allows for higher current handling while maintaining compact dimensions.

Maximum Repetitive Peak Reverse Voltage: 400 V

A high peak reverse voltage rating makes this diode ideal for use in high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 120 A

The ability to handle 120 A of peak forward current ensures robustness against transient conditions, enhancing durability.

Diode Element Material: SILICON

Silicon material offers excellent thermal and electrical properties, contributing to the diode's overall efficiency.

Technical Specifications

Diodes & Rectifiers STTH16R04CFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, SOFT FACTOR IS 0.4

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH16R04CFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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