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STTH16003TV1

STMicroelectronics

STTH16003TV1 by STMicroelectronics

STTH16003TV1 by STMicroelectronics is an ultra-fast soft recovery rectifier diode with a max reverse recovery time of 0.08 µs and a peak reverse voltage of 300 V. It operates efficiently at temperatures from -55 °C to 150 °C, handling up to 80 A. Ideal for high-performance applications requiring rapid switching.

Median Price

$20.455

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 1 parts In-Stock

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$12.600

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1

$12.600

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Verical

USA . 5 parts In-Stock

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$16.715

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$16.715

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Arrow

USA . 5 parts In-Stock

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$16.799

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5

$16.799

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Farnell

UK . 6 parts In-Stock

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$18.540

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$14.380

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6

$18.540

$14.380

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Mouser Electronics

USA . 178 parts In-Stock

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$22.370

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$16.320

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$22.370

$16.320

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DigiKey

USA . 13 parts In-Stock

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$27.090

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$15.617

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13

$27.090

$15.617

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Newark

USA . 6 parts In-Stock

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$29.890

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$23.150

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6

$29.890

$23.150

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Element14

Singapore . 6 parts In-Stock

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$32.350

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$26.740

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$26.540

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6

$32.350

$26.740

$26.540

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Avnet

USA . 120 parts In-Stock

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Digiode

USA . 3,626 parts In-Stock

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$11.504

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3,626

$11.504

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Tomark Electronics Ltd

UK . 200 parts In-Stock

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$94.360

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$94.360

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R&J Components

USA . 4,710 parts In-Stock

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Vyrian

USA . 4,398 parts In-Stock

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Anansix

USA . 1,533 parts In-Stock

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ComSIT Distribution GmbH

Germany . 70 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 8 parts In-Stock

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Electronics Depot

USA . 2 parts In-Stock

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IDEA Electronic Components Group

UK . 1,061 parts In-Stock

1+ parts

$0.129

100+ parts

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$0.116

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1,061

$0.129

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$0.116

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MKK Technologies

India . 2,346 parts In-Stock

1+ parts

$0.242

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2,346

$0.242

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DigiPath Technology Company

USA . 2,346 parts In-Stock

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$0.242

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2,346

$0.242

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Corphita

USA . 3,539 parts In-Stock

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$10.899

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3,539

$10.899

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Component Stockers USA

USA . 59 parts In-Stock

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$11.740

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$11.740

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Continental Prestige Electronics

USA . 101 parts In-Stock

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$18.400

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$14.500

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101

$18.400

$14.500

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Microchip USA

USA . 3,234 parts In-Stock

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$65.964

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$65.964

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QUARKTWIN TECHNOLOGY LTD

USA . 9,356 parts In-Stock

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Parana Technologies

USA . 635 parts In-Stock

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$0.154

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Perfect Parts

USA . 112 parts In-Stock

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Authorized Procurement Solutions

USA . 90 parts In-Stock

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Eastek

USA . 80 parts In-Stock

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GreenTree Electronics

Israel . 80 parts In-Stock

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Assy Fe

Spain . 8 parts In-Stock

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Overview

Unlock exceptional performance with the STTH16003TV1 from STMicroelectronics—a trusted name in innovative diode and rectifier solutions. Designed for ultra-fast soft recovery, this high-quality product ensures reliable operation across a wide temperature range, making it ideal for demanding applications. Enjoy enhanced efficiency and durability while benefiting from STMicroelectronics' commitment to excellence, giving you the edge in your projects. Experience superior reliability today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight materials enhance reliability and performance in varying environments.

Config: SEPARATE, 2 ELEMENTS

Provides flexibility in circuit design and allows for efficient thermal management.

Maximum Reverse Recovery Time: 0.08 us

Ultra-fast recovery time minimizes switching losses, making it an excellent choice for high-speed applications.

Maximum Reverse Current: 200 uA

Low reverse leakage current enhances efficiency and reduces power loss in the circuit.

Package Shape: RECTANGULAR

Optimized shape for space efficiency in PCB layouts, facilitating easier integration into various designs.

Reverse Test Voltage: 300 V

High reverse test voltage ensures reliability and durability in high-voltage applications.

No. of Terminals: 4

Four terminals provide robust connectivity options for improved circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure installation, making it suitable for robust and high-performance applications.

Application: ULTRA FAST SOFT RECOVERY

Specialized for ultra-fast soft recovery, ensuring quick response times and reduced electromagnetic interference.

Maximum Operating Temperature: 150 °C

High temperature tolerance demonstrates reliability and stability in extreme conditions.

Minimum Operating Temperature: -55 °C

Wide operational temperature range ensures functionality in various harsh environments.

Terminal Finish: NICKEL

Nickel finish provides corrosion resistance, prolonging the lifespan of the component.

Terminal Position: UPPER

Upper terminal position allows for easier layout and assembly, enhancing usability in design.

Case Connection: ISOLATED

Isolated case connection improves safety and performance by minimizing interference with the surrounding environment.

Diode Type: RECTIFIER DIODE

Designed specifically to handle current flow in one direction, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

Relatively low forward voltage drop contributes to higher efficiency and reduced heat generation.

Maximum Output Current: 80 A

Capable of handling high output current, making it suitable for high-power applications.

No. of Elements: 2

Having two elements allows for parallel configurations, increasing current capacity without sacrificing performance.

Maximum Repetitive Peak Reverse Voltage: 300 V

High peak reverse voltage rating ensures reliable operation in demanding electrical environments.

Maximum Non Repetitive Peak Forward Current: 800 A

Supports very high temporary current loads, making it ideal for applications requiring burst current capability.

Diode Element Material: SILICON

Silicon offers excellent electrical properties and reliability, making it the standard for high-performance diodes.

Technical Specifications

Diodes & Rectifiers STTH16003TV1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

800 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

80 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

200 uA

Maximum Reverse Recovery Time:

.08 us

Reverse Test Voltage:

300 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH16003TV1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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