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STTH152RL

STMicroelectronics

STTH152RL by STMicroelectronics

STTH152RL by STMicroelectronics is a high-efficiency rectifier diode with a max reverse recovery time of 0.032 µs and operates at up to 175 °C. It supports 1.5 A output current and handles peak reverse voltages of 200 V, making it ideal for power applications. Its isolated case connection ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,626 parts In-Stock

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2,626

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Anansix

USA . 1,776 parts In-Stock

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1,776

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Digiode

USA . 466 parts In-Stock

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466

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,274 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

$0.058

10k+ parts

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1,274

$0.064

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$0.058

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MKK Technologies

India . 962 parts In-Stock

1+ parts

$0.121

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962

$0.121

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DigiPath Technology Company

USA . 962 parts In-Stock

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$0.121

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962

$0.121

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AZTECH Wire

Italy . 1,012 parts In-Stock

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$10.780

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1,012

$10.780

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Corphita

USA . 2,588 parts In-Stock

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2,588

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Parana Technologies

USA . 865 parts In-Stock

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$0.077

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865

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$0.077

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Overview

Unlock unparalleled efficiency with the STTH152RL rectifier diode from STMicroelectronics. Renowned for its top-tier quality and innovative design, STMicroelectronics ensures this diode excels in demanding applications, delivering reliability and performance even in extreme conditions. With its swift recovery time and robust construction, the STTH152RL is perfect for optimizing power management in your systems, guaranteeing long-lasting value and enhanced operational benefits. Choose excellence, choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent insulation and protection against environmental factors, ensuring durability and reliability.

Config: SINGLE

A single diode configuration simplifies circuit design and minimizes space requirements, making it ideal for compact applications.

Maximum Reverse Recovery Time: 0.032 us

A low reverse recovery time ensures minimal energy loss during switching, improving the diode's efficiency in high-frequency applications.

Package Shape: ROUND

The round package shape allows for efficient thermal management and makes integration into various circuit designs easier.

No. of Terminals: 2

Having only two terminals reduces complexity in circuit connections and helps in achieving a more straightforward layout.

Package Style (Meter): LONG FORM

The long form package style facilitates better heat dissipation, which is essential for maintaining performance in high-current applications.

Application: EFFICIENCY

Designed with efficiency in mind, this diode is particularly suitable for applications where power loss needs to be minimized.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode is capable of functioning in high-temperature environments without performance degradation.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability, ensuring reliable connections in assembly processes and long-term operations.

Terminal Position: AXIAL

The axial terminal position allows for easy installation in through-hole mounting, which is common in many electronic applications.

Case Connection: ISOLATED

An isolated case connection reduces the risk of short circuits and enhances safety in the applications where the diode is used.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically suited for converting alternating current (AC) to direct current (DC), making it versatile for various power conversion applications.

Maximum Forward Voltage (VF): 0.75 V

A low forward voltage drop increases the efficiency of power conversion, resulting in less wasted energy in the circuit.

Maximum Output Current: 1.5 A

Supporting a maximum output current of 1.5 A allows this diode to handle moderate power loads effectively, making it suitable for a range of applications.

Terminal Form: WIRE

Wire terminal form provides flexibility in mounting and allows for easier handling in a variety of circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 200 V

With a high repetitive peak reverse voltage rating, this diode can withstand substantial voltage spikes, protecting the circuit from damage.

Maximum Non-Repetitive Peak Forward Current: 80 A

The ability to handle high non-repetitive peak forward currents makes this diode suitable for applications involving inrush currents or transient conditions.

Diode Element Material: SILICON

Using silicon as the diode element material contributes to greater reliability and performance in rectification processes, making it a standard choice in diodes.

Technical Specifications

Diodes & Rectifiers STTH152RL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.032 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH152RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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