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STTH1302CG

STMicroelectronics

STTH1302CG by STMicroelectronics

STTH1302CG by STMicroelectronics is a common cathode rectifier diode ideal for efficient applications. It features a max reverse recovery time of 0.025 µs, supports up to 6.5 A output current, and operates at a peak reverse voltage of 200 V. Its compact design ensures reliable performance in surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,328 parts In-Stock

1+ parts

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4,328

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Digiode

USA . 2,023 parts In-Stock

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2,023

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Anansix

USA . 1,331 parts In-Stock

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1,331

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,285 parts In-Stock

1+ parts

$0.129

100+ parts

-

1k+ parts

$0.116

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1,285

$0.129

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$0.116

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MKK Technologies

India . 149 parts In-Stock

1+ parts

$0.242

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149

$0.242

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DigiPath Technology Company

USA . 149 parts In-Stock

1+ parts

$0.242

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149

$0.242

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AZTECH Wire

Italy . 1,102 parts In-Stock

1+ parts

$19.980

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1,102

$19.980

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Component Stockers USA

USA . 336 parts In-Stock

1+ parts

$99.990

100+ parts

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336

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 3,994 parts In-Stock

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3,994

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Corphita

USA . 2,574 parts In-Stock

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2,574

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Parana Technologies

USA . 1,499 parts In-Stock

1+ parts

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$0.154

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1,499

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$0.154

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Overview

Elevate your designs with the STTH1302CG from STMicroelectronics, a top-tier rectifier diode that embodies quality and reliability. Perfect for efficiency-driven applications, this compact surface mount solution delivers exceptional performance while handling high currents and temperature extremes with ease. Trust in STMicroelectronics' reputation for innovation to enhance your projects, ensuring optimal performance and longevity that your customers can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, enhancing overall reliability.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for efficient circuit design, simplifying the integration of multiple diodes.

Surface Mount: YES

As a surface mount device, it allows for compact designs and easy placement on PCB, suitable for high-density applications.

Maximum Reverse Recovery Time: 0.025 us

A low reverse recovery time improves switching efficiency and reduces power loss in high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape offers versatility in design and allows for optimal space utilization on the PCB.

No. of Terminals: 2

The simplified two-terminal design contributes to easier handling and connections in circuit designs.

Package Style (Meter): SMALL OUTLINE

Small outline packaging helps save space and is suitable for modern electronic equipment with limited real estate.

Application: EFFICIENCY

Designed specifically for efficiency, this product is ideal for power-sensitive applications, maximizing performance.

Maximum Operating Temperature: 175 °C

A high operating temperature rating ensures reliability and performance in demanding environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and corrosion resistance, enhancing the longevity of the connections.

Terminal Position: SINGLE

A single terminal position simplifies integration into circuits and minimizes potential assembly errors.

Case Connection: CATHODE

With cathode case connection, this diode integrates seamlessly into standard designs and simplifies layout planning.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum time of 30 seconds at peak reflow maintains component integrity while optimizing assembly processes.

Peak Reflow Temperature: 245 °C

The high peak reflow temperature ensures compatibility with various soldering techniques, making it adaptable for different assembly processes.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply and motor control applications.

Maximum Forward Voltage (VF): 0.95 V

A low forward voltage drop increases the overall efficiency and reduces heat generation, essential for high-performance applications.

Maximum Output Current: 6.5 A

With a high output current rating, this diode can handle demanding applications, making it suitable for power-intensive devices.

Terminal Form: GULL WING

The gull wing terminal form provides good mechanical strength and facilitates easy soldering, which enhances manufacturing quality.

No. of Elements: 2

Having two elements allows for increased versatility and redundancy in applications, improving circuit reliability.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high reverse voltage rating enables it to withstand significant voltage changes, making it suitable for various high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 70 A

The ability to handle high non-repetitive peak forward current ensures robustness against current spikes, enhancing reliability.

Diode Element Material: SILICON

Using silicon as the diode element material ensures excellent performance in terms of conductivity and thermal stability.

Technical Specifications

Diodes & Rectifiers STTH1302CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

70 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.025 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH1302CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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