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STTH1212G-TR

STMicroelectronics

STTH1212G-TR by STMicroelectronics

STTH1212G-TR by STMicroelectronics is a single rectifier diode with 1200V reverse voltage, 12A output current, and 0.1us recovery time. Ideal for high voltage ultra-fast soft recovery applications in small outline packages. Operating temperature up to 175°C with matte tin finish and gull wing terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,086 parts In-Stock

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4,086

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Digiode

USA . 1,788 parts In-Stock

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1,788

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Anansix

USA . 324 parts In-Stock

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324

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Sternenhof Electronics

Switzerland . 295 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 365 parts In-Stock

1+ parts

$0.010

100+ parts

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365

$0.010

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IDEA Electronic Components Group

UK . 977 parts In-Stock

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$0.141

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-

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$0.127

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977

$0.141

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$0.127

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MKK Technologies

India . 646 parts In-Stock

1+ parts

$0.265

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646

$0.265

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DigiPath Technology Company

USA . 646 parts In-Stock

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$0.265

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646

$0.265

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AZTECH Wire

Italy . 209 parts In-Stock

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$17.148

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$17.148

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,930 parts In-Stock

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Argo Parts USA

USA . 4,990 parts In-Stock

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Continental Prestige Electronics

USA . 4,684 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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Corphita

USA . 847 parts In-Stock

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Parana Technologies

USA . 706 parts In-Stock

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$0.168

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706

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$0.168

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Overview

Looking for high-quality diodes and rectifiers for your applications? Look no further than the STTH1212G-TR by STMicroelectronics. With a focus on innovation and reliability, STMicroelectronics delivers top-notch products that meet the highest standards. This diode offers ultra-fast soft recovery and can handle high voltages with ease, making it ideal for a wide range of applications. Experience the benefits of this high-performance diode and discover the value it brings to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplifies circuit design and installation, ideal for single diode applications.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and facilitating automated assembly.

Maximum Reverse Recovery Time: 0.1 us

Ensures fast switching speed, making it suitable for high frequency applications.

Package Shape: RECTANGULAR

Offers a compact design, maximizing space utilization in the circuit.

No. of Terminals: 2

Provides easy connection to the circuit, simplifying installation.

Package Style (Meter): SMALL OUTLINE

Offers a standardized package format for compatibility with various devices.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Ideal for applications requiring high voltage operation and fast recovery times.

Maximum Operating Temperature: 175 °C

Ensures reliable performance even in high temperature environments.

Terminal Finish: MATTE TIN

Provides corrosion resistance and solderability for reliable connections.

Terminal Position: SINGLE

Simplifies installation and allows for easy circuit integration.

Case Connection: CATHODE

Offers a common connection point for easy circuit configuration.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.9 V

Low forward voltage drop reduces power loss and improves efficiency.

Maximum Output Current: 12 A

Provides high current handling capability, suitable for power applications.

Terminal Form: GULL WING

Facilitates easy soldering and secure attachment to the PCB.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Suitable for high voltage applications, providing reliable reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 100 A

Offers high current surge capability, ideal for transient conditions.

Diode Element Material: SILICON

Provides high temperature operation and reliability, ensuring long-term performance.

Technical Specifications

Diodes & Rectifiers STTH1212G-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH1212G-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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