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STTH1210FP

STMicroelectronics

STTH1210FP by STMicroelectronics

STTH1210FP by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and a peak reverse voltage of 1000 V. It operates at up to 175 °C with a forward current capacity of 12 A. Ideal for applications requiring efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,712 parts In-Stock

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3,712

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Digiode

USA . 2,550 parts In-Stock

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2,550

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Anansix

USA . 553 parts In-Stock

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553

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ACDS - Activité Composants Distribution Service

France . 414 parts In-Stock

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414

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,689 parts In-Stock

1+ parts

$0.109

100+ parts

-

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$0.099

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1,689

$0.109

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$0.099

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MKK Technologies

India . 1,309 parts In-Stock

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$0.206

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1,309

$0.206

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DigiPath Technology Company

USA . 1,309 parts In-Stock

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$0.206

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1,309

$0.206

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AZTECH Wire

Italy . 140 parts In-Stock

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$17.150

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140

$17.150

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Kepictronics

USA . 7,000 parts In-Stock

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7,000

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A-Z Elektronik GmbH

Germany . 5,267 parts In-Stock

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5,267

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Corphita

USA . 2,287 parts In-Stock

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2,287

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Parana Technologies

USA . 467 parts In-Stock

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$0.131

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467

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$0.131

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Authorized Procurement Solutions

USA . 414 parts In-Stock

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414

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Overview

Elevate your designs with the STTH1210FP from STMicroelectronics, a leader in innovative semiconductor solutions. This high-voltage ultra-fast soft recovery rectifier diode is designed for reliability and exceptional performance, ensuring your applications thrive under demanding conditions. With robust thermal management and superior switching capabilities, it’s ideal for power supplies and industrial automation, delivering efficiency and long-lasting value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various environmental conditions, making the diode suitable for long-term applications.

Config: SINGLE

A single configuration simplifies the design and integration of the diode in circuits, making it ideal for applications where space and efficiency are essential.

Maximum Reverse Recovery Time: 0.09 us

A low reverse recovery time enhances switching efficiency, making this diode suitable for high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easier assembly and packing density, optimizing space utilization in designs.

No. of Terminals: 2

With two terminals, the diode simplifies connectivity in circuit designs and is compatible with standard configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides stable mounting options, enhancing the mechanical integrity of the assembly in various applications.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

High voltage ultra-fast soft recovery capabilities enable the diode to perform well in high-demand and high-frequency applications.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures reliability in extreme conditions commonly encountered in industrial applications.

Terminal Finish: TIN

Tin finish provides good solderability which is vital for ensuring reliable connections during assembly.

Terminal Position: SINGLE

The single terminal position simplifies integration into circuit boards and aids in efficient layout design.

Case Connection: ISOLATED

Isolated case connection enhances safety and performance in sensitive electronic designs by reducing the risk of electrical shorts.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is particularly suited for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 1.7 V

A moderately low forward voltage drop minimizes power loss during operation, leading to enhanced overall efficiency.

Maximum Output Current: 12 A

With a maximum output current capability of 12 A, the diode is ideal for high-current applications, ensuring performance in demanding scenarios.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides robust electrical connections, making it suitable for applications that require reliable mounting.

Maximum Repetitive Peak Reverse Voltage: 1000 V

High repetitive peak reverse voltage rating allows the diode to withstand significant voltage spikes, enhancing durability in high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 80 A

A high non-repetitive peak forward current rating ensures the diode can handle transient spikes, improving performance in surge conditions.

Diode Element Material: SILICON

Silicon as a diode element material offers excellent thermal conductivity and efficiency, making it suitable for a wide range of electronic devices.

Technical Specifications

Diodes & Rectifiers STTH1210FP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.09 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH1210FP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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