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STTH1202DI

STMicroelectronics

STTH1202DI by STMicroelectronics

STTH1202DI by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.035 µs and supports up to 12 A output current. It operates at a max temp of 175 °C, making it ideal for high-performance applications. Its flange mount design ensures reliable installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,330 parts In-Stock

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7,330

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Digiode

USA . 2,785 parts In-Stock

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2,785

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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2,000

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ComSIT USA

USA . 2,000 parts In-Stock

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2,000

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Anansix

USA . 1,740 parts In-Stock

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1,740

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Component Sense

UK . 240 parts In-Stock

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240

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 102 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

$0.045

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102

$0.050

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$0.045

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MKK Technologies

India . 599 parts In-Stock

1+ parts

$0.093

100+ parts

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599

$0.093

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DigiPath Technology Company

USA . 599 parts In-Stock

1+ parts

$0.093

100+ parts

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599

$0.093

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AZTECH Wire

Italy . 231 parts In-Stock

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$12.830

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231

$12.830

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Microchip USA

USA . 8,076 parts In-Stock

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8,076

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Perfect Parts

USA . 2,476 parts In-Stock

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2,476

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Corphita

USA . 637 parts In-Stock

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637

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Parana Technologies

USA . 620 parts In-Stock

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$0.059

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620

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$0.059

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Cyclops Electronics Ltd (Excess)

UK . 39 parts In-Stock

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39

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Overview

Experience unparalleled performance with the STTH1202DI from STMicroelectronics, a leader in innovation and reliability. This ultra-fast recovery rectifier diode is perfect for demanding applications, delivering exceptional efficiency and durability even at high temperatures. With its robust design and outstanding reverse recovery time, you can trust this component to enhance your systems' performance while reducing energy waste. Elevate your projects with ST's commitment to quality and cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to environmental factors, making it reliable for various applications.

Config: SINGLE

A single diode configuration simplifies design and integration into circuits, providing ease of use.

Maximum Reverse Recovery Time: 0.035 µs

This ultra-fast recovery time allows the diode to switch efficiently, making it perfect for high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, making it suitable for compact designs.

No. of Terminals: 2

Having two terminals simplifies the connection process, ensuring easy installation and compatibility with standard circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount design provides robust mechanical support, enhancing stability in various operational environments.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode excels in circuits that require rapid switching, reducing energy loss.

Maximum Operating Temperature: 175 °C

With a high operating temperature, this diode can perform reliably in demanding environments, increasing overall product lifespan.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability, ensuring strong and reliable connections during assembly.

Terminal Position: SINGLE

The single terminal position simplifies design requirements and routing on PCBs.

Case Connection: ISOLATED

Isolated case connection means enhanced safety and reliability by reducing the risk of short circuits.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), essential for power supply applications.

Maximum Forward Voltage (VF): 0.95 V

A low forward voltage drop ensures minimal energy loss during operation, leading to improved efficiency.

Maximum Output Current: 12 A

This high output current rating allows the diode to handle significant loads, making it suitable for high-power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide excellent mechanical strength and are ideal for high-reliability applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high reverse voltage capability ensures the diode can withstand significant electrical stress, protecting circuit integrity.

Maximum Non-Repetitive Peak Forward Current: 100 A

This high peak forward current rating allows the diode to handle surges, making it reliable in transient conditions.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures high efficiency and stability, making it a preferred choice in electronics.

Technical Specifications

Diodes & Rectifiers STTH1202DI attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH1202DI Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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