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STTH10LCD06SG-TR

STMicroelectronics

STTH10LCD06SG-TR by STMicroelectronics

STTH10LCD06SG-TR by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.05 µs, handling up to 10 A and 600 V. It features a compact surface mount design in a rectangular package. Ideal for applications requiring efficient power management at elevated temperatures (up to 175 °C).

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,836 parts In-Stock

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4,836

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Vyrian

USA . 4,390 parts In-Stock

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4,390

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Anansix

USA . 940 parts In-Stock

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940

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Connector Distribution Corp

USA . 400 parts In-Stock

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400

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Right Parts Inc.

USA . 400 parts In-Stock

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400

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Semi Source

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 488 parts In-Stock

1+ parts

$0.056

100+ parts

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$0.051

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488

$0.056

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$0.051

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MKK Technologies

India . 1,643 parts In-Stock

1+ parts

$0.106

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1,643

$0.106

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DigiPath Technology Company

USA . 1,643 parts In-Stock

1+ parts

$0.106

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1,643

$0.106

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AZTECH Wire

Italy . 1,006 parts In-Stock

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$13.200

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1,006

$13.200

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Component Stockers USA

USA . 579 parts In-Stock

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$99.990

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579

$99.990

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Corphita

USA . 2,873 parts In-Stock

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2,873

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Parana Technologies

USA . 1,375 parts In-Stock

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$0.067

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1,375

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$0.067

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Overview

Elevate your designs with the STTH10LCD06SG-TR from STMicroelectronics—a game-changer in high voltage ultra-fast recovery diodes. Renowned for their superior quality and reliability, STMicroelectronics ensures that this surface mount diode offers unmatched performance, making it ideal for demanding applications. With a compact footprint and excellent thermal management, it streamlines your projects while delivering maximum efficiency and durability. Choose ST for innovation that powers your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robust protection against environmental factors, enhancing reliability.

Config: SINGLE

A single configuration allows for simpler circuit designs, reducing complexity and component count.

Surface Mount: YES

Surface mount capability facilitates automated assembly and saves space on PCB, ideal for modern compact designs.

Maximum Reverse Recovery Time: 0.05 us

This ultra-fast recovery time makes it suitable for high-frequency applications, improving circuit performance.

Package Shape: RECTANGULAR

Rectangular shape optimizes space on the PCB and allows for efficient heat dissipation in compact layouts.

No. of Terminals: 2

Having only two terminals simplifies the installation process and reduces potential points of failure.

Package Style (Meter): SMALL OUTLINE

A small outline package style is perfect for space-constrained applications, maximizing available board area.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage and ultra-fast recovery applications, this diode aids in preventing breakdown and offers efficient performance.

Maximum Operating Temperature: 175 °C

A high operating temperature rating ensures reliability in demanding environments, reducing the risk of overheating.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and resistance to corrosion, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout, making it easier to integrate into various designs.

Case Connection: CATHODE

Cathode connection provides clearer orientation in circuit designs, ensuring correct installation and operation.

Maximum Time At Peak Reflow Temperature: 30s

A maximum reflow time of 30 seconds aids in compatibility with modern soldering processes, enhancing manufacturing efficiency.

Peak Reflow Temperature: 245 °C

High peak reflow temperature compatibility allows for use in various soldering applications, ensuring robust assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it suitable for power conversion applications.

Maximum Forward Voltage (VF): 1.6 V

A low forward voltage minimizes power loss during operation, enhancing overall energy efficiency in circuits.

Maximum Output Current: 10 A

With a maximum output current of 10 A, this diode can handle substantial loads, making it versatile for various applications.

Terminal Form: GULL WING

Gull wing terminals ensure reliable mechanical and electrical connection while facilitating easier soldering.

Maximum Repetitive Peak Reverse Voltage: 600 V

High voltage tolerance makes this diode ideal for high voltage applications, preventing breakdown in demanding environments.

Maximum Non-Repetitive Peak Forward Current: 100 A

The ability to handle non-repetitive peak forward currents of up to 100 A makes it suitable for surge applications.

Diode Element Material: SILICON

Silicon as the base material provides reliable performance and efficiency, making it the standard for diode applications.

Technical Specifications

Diodes & Rectifiers STTH10LCD06SG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH10LCD06SG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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