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STTH108RL

STMicroelectronics

STTH108RL by STMicroelectronics

STTH108RL by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.075 µs and can handle up to 800 V peak reverse voltage. It operates at temperatures up to 175 °C, making it ideal for high-efficiency power applications. With a compact design and matte tin terminals, it's perfect for space-constrained environments.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 97 parts In-Stock

1+ parts

$0.134

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97

$0.134

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Vyrian

USA . 5,558 parts In-Stock

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5,558

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Anansix

USA . 1,315 parts In-Stock

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1,315

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Digiode

USA . 1,214 parts In-Stock

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1,214

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 90 parts In-Stock

1+ parts

$0.174

100+ parts

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$0.156

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90

$0.174

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$0.156

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MKK Technologies

India . 2,277 parts In-Stock

1+ parts

$0.327

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2,277

$0.327

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DigiPath Technology Company

USA . 2,277 parts In-Stock

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$0.327

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2,277

$0.327

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AZTECH Wire

Italy . 309 parts In-Stock

1+ parts

$11.890

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309

$11.890

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Corphita

USA . 2,337 parts In-Stock

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2,337

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Parana Technologies

USA . 720 parts In-Stock

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$0.208

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720

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$0.208

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Overview

Unlock peak performance with the STTH108RL rectifier diode from STMicroelectronics, a leader in innovative semiconductor solutions. Renowned for reliability and superior quality, this diode is ideal for applications requiring efficient power management. With its exceptional thermal stability and robust design, it ensures optimal operation even in demanding environments. Elevate your projects with a diode that promises durability and efficiency, delivering outstanding value beyond mere specifications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides excellent protection against environmental factors, ensuring long reliability and performance in various applications.

Config: SINGLE

A single configuration makes this diode suitable for simple circuit designs, minimizing space requirements and simplifying integration.

Maximum Reverse Recovery Time: 0.075 µs

A low reverse recovery time enhances switching performance, making the diode ideal for high-speed applications and reducing power losses.

Package Shape: ROUND

The round package shape allows for versatile mounting options and facilitates efficient thermal management, improving overall performance.

No. of Terminals: 2

With only two terminals, this diode is easy to connect and integrate into various circuit designs, promoting simplicity and reliability.

Package Style (Meter): LONG FORM

The long form package style can accommodate larger wire loops, improving the overall current handling and thermal dissipation.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode is suitable for applications in extreme environments, ensuring reliability under challenging conditions.

Terminal Finish: MATTE TIN

Matte tin finish helps to prevent soldering issues during assembly, ensuring strong electrical connections and enhancing durability.

Terminal Position: AXIAL

The axial terminal position offers flexible orientation options, making it easier to accommodate in crowded circuit layouts.

Case Connection: ISOLATED

Isolated case connection provides enhanced safety, minimizing the risk of short circuits and improving reliability in sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is ideal for converting AC to DC, making it essential for power supply and energy conversion applications.

Maximum Forward Voltage (VF): 1.25 V

A low forward voltage drop increases efficiency and reduces power losses, making this diode an energy-efficient choice for various applications.

Maximum Output Current: 1 A

The ability to handle up to 1 A of output current makes this diode suitable for a wide range of electronic applications, from simple gadgets to more complex systems.

Terminal Form: WIRE

Wire terminal form allows for easier soldering and better mechanical stability in circuit boards, enhancing overall assembly quality.

Maximum Repetitive Peak Reverse Voltage: 800 V

A high peak reverse voltage rating makes this diode suitable for high voltage applications, ensuring reliable operation under demanding electrical conditions.

Maximum Non-Repetitive Peak Forward Current: 25 A

The capability to handle high non-repetitive peak forward currents allows this diode to withstand surges and transient conditions, providing added durability.

Diode Element Material: SILICON

Silicon as the diode element material ensures good thermal stability and performance, making the diode reliable for various electronic applications.

Technical Specifications

Diodes & Rectifiers STTH108RL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH108RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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