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STPSC606G-TR

STMicroelectronics

STPSC606G-TR by STMicroelectronics

STPSC606G-TR from STMicroelectronics is a Schottky rectifier diode with a max output current of 6 A and peak reverse voltage of 600 V. It operates in extreme temps from -40 °C to 175°C, making it ideal for high-efficiency power applications. Its compact design suits surface mount technology.

Median Price

$1.380

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 804 parts In-Stock

1+ parts

$0.469

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-

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804

$0.469

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Schukat

Germany . 90 parts In-Stock

1+ parts

$2.290

100+ parts

$1.580

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-

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90

$2.290

$1.580

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Vyrian

USA . 5,958 parts In-Stock

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5,958

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Digiode

USA . 2,463 parts In-Stock

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2,463

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Anansix

USA . 1,074 parts In-Stock

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1,074

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.086

100+ parts

$0.078

1k+ parts

$0.071

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-

50

$0.086

$0.078

$0.071

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IDEA Electronic Components Group

UK . 1,132 parts In-Stock

1+ parts

$0.095

100+ parts

-

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$0.085

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-

1,132

$0.095

-

$0.085

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MKK Technologies

India . 618 parts In-Stock

1+ parts

$0.178

100+ parts

-

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618

$0.178

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DigiPath Technology Company

USA . 618 parts In-Stock

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$0.178

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618

$0.178

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AZTECH Wire

Italy . 868 parts In-Stock

1+ parts

$9.060

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868

$9.060

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Perfect Parts

USA . 4,585 parts In-Stock

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4,585

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Parana Technologies

USA . 1,671 parts In-Stock

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$0.113

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$0.113

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Corphita

USA . 386 parts In-Stock

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386

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Overview

Elevate your designs with the STPSC606G-TR Schottky diode from STMicroelectronics, a leader in semiconductor innovation. Crafted for durability and efficiency, this surface mount diode excels in high-temperature environments, ensuring reliable performance across diverse applications—from power supplies to automotive systems. Experience enhanced energy management and reduced losses, providing your projects with the quality and reliability that only STMicroelectronics can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing durable plastic/epoxy material ensures reliability and longevity, making this diode suitable for various applications.

Config: SINGLE

A single configuration simplifies circuit design and saves space, making it a convenient choice for compact applications.

Surface Mount: YES

Surface mount capability allows for automated assembly and minimizes PCB space usage, enhancing manufacturability.

Package Shape: RECTANGULAR

The rectangular shape provides efficient space utilization on the PCB, facilitating better layout options.

No. of Terminals: 2

With only two terminals, installation is straightforward and less prone to error, simplifying integration into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for applications with strict size requirements, making it versatile for use in various devices.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows this diode to perform reliably in extreme conditions, enhancing its versatility.

Minimum Operating Temperature: -40 °C

The ability to operate in low temperatures ensures the diode's functionality in cold environments, widening its application range.

Terminal Finish: MATTE TIN

A matte tin terminal finish improves solderability and reduces the risk of corrosion, ensuring better electrical performance over time.

Terminal Position: SINGLE

Having a single terminal position simplifies PCB layout, making design and manufacturing processes more efficient.

Case Connection: CATHODE

A cathode case connection optimizes circuit performance for rectification, making this diode particularly effective for its intended use.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures the diode can withstand soldering processes without damage, improving reliability.

Peak Reflow Temperature °C: 245

A peak reflow temperature of 245 °C allows the diode to be used in modern manufacturing processes without compromising performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for efficient current rectification, enhancing power management in circuits.

Maximum Forward Voltage (VF): 1.7 V

A maximum forward voltage of 1.7V minimizes power loss during operation, improving overall circuit efficiency.

Maximum Output Current: 6 A

With a maximum output current of 6A, this diode can handle significant load demands, making it suitable for high-power applications.

Technology: SCHOTTKY

The Schottky technology facilitates faster switching speeds and lower forward voltage drop, enhancing performance in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals provide reliable solder joints and facilitate automated handling during assembly, enhancing process efficiency.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating ensures robustness in high-voltage applications, increasing the diode's versatility.

Maximum Non Repetitive Peak Forward Current: 110 A

The ability to handle peak forward currents of 110A showcases the diode's robustness in demanding applications without failure.

Diode Element Material: SILICON CARBIDE

Silicon carbide construction allows for higher efficiency and thermal conductivity, making this diode exceptional for power applications.

Technical Specifications

Diodes & Rectifiers STPSC606G-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPSC606G-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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