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STPSC40H12CWY

STMicroelectronics

STPSC40H12CWY by STMicroelectronics

STPSC40H12CWY from STMicroelectronics is a high-voltage Schottky rectifier diode with a max reverse voltage of 1200 V and forward current of 20 A. It operates in extreme temps (-40 °C to 175 °C) and features a common cathode configuration. Ideal for high voltage power applications, it ensures reliability and efficiency.

Median Price

$18.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 720 parts In-Stock

1+ parts

$17.750

100+ parts

$11.035

1k+ parts

$9.694

10k+ parts

-

720

$17.750

$11.035

$9.694

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Mouser Electronics

USA . 596 parts In-Stock

1+ parts

$18.250

100+ parts

$11.180

1k+ parts

$10.750

10k+ parts

-

596

$18.250

$11.180

$10.750

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Avnet

USA . 1,140 parts In-Stock

1+ parts

-

100+ parts

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1,140

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Digiode

USA . 418 parts In-Stock

1+ parts

$14.088

100+ parts

-

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418

$14.088

-

-

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Vyrian

USA . 3,720 parts In-Stock

1+ parts

-

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3,720

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Anansix

USA . 1,100 parts In-Stock

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1,100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,602 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

$0.042

10k+ parts

-

1,602

$0.047

-

$0.042

-

MKK Technologies

India . 187 parts In-Stock

1+ parts

$0.088

100+ parts

-

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187

$0.088

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DigiPath Technology Company

USA . 187 parts In-Stock

1+ parts

$0.088

100+ parts

-

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187

$0.088

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-

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Corphita

USA . 4,286 parts In-Stock

1+ parts

$13.347

100+ parts

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4,286

$13.347

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Microchip USA

USA . 9,633 parts In-Stock

1+ parts

$51.451

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9,633

$51.451

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Parana Technologies

USA . 1,933 parts In-Stock

1+ parts

-

100+ parts

$0.056

1k+ parts

-

10k+ parts

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1,933

-

$0.056

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Overview

Elevate your high-voltage power applications with the STPSC40H12CWY from STMicroelectronics, a leader in semiconductor innovation. This robust Schottky rectifier diode combines exceptional thermal performance and reliability, ensuring outstanding efficiency even in demanding environments. Its AEC-Q101 certification guarantees top-notch quality for automotive applications. Experience the benefits of superior voltage handling and enhanced durability, giving your designs the competitive edge they deserve!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent insulation and thermal properties, ensuring durability in a wide range of environments.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with two elements allows for efficient power management in multiple applications, making it ideal for various circuit designs.

Maximum Reverse Current: 120 uA

A low maximum reverse current of 120 µA indicates minimal leakage, enhancing the efficiency and reliability of the device in high voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates space-efficient PCB layout and can easily fit into various device designs with limited space.

Reverse Test Voltage: 1200 V

This diodes' capability to withstand a reverse test voltage of 1200 V makes it suitable for high voltage applications, ensuring it can handle substantial voltage fluctuations.

No. of Terminals: 3

The presence of three terminals allows for versatile connectivity options, enhancing design flexibility in different circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure mounting option that minimizes mechanical stress during operation, contributing to increased reliability.

Application: HIGH VOLTAGE POWER

Designed specifically for high voltage power applications, this diode excels in managing high electrical loads safely and efficiently.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode can function reliably in high-temperature environments, reducing the risk of thermal failure.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C allows for operation in extreme cold conditions, enhancing versatility for outdoor and rugged applications.

Terminal Position: SINGLE

A single terminal position simplifies interconnection and soldering during PCB assembly, ensuring ease of application in various designs.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high-quality performance and reliability in automotive applications, making it a trusted choice for demanding environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component effectively converts alternating current (AC) to direct current (DC), making it crucial for power supply circuits.

Maximum Forward Voltage (VF): 1.5 V

A maximum forward voltage of 1.5 V indicates low power loss during operation, enhancing overall circuit efficiency and reducing heat generation.

Maximum Output Current: 20 A

With a maximum output current rating of 20 A, this diode can handle significant load demands, making it suitable for high-performance applications.

Technology: SCHOTTKY

The Schottky design offers fast switching speeds and low forward voltage drop, resulting in improved efficiency and performance in high frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections that can withstand vibration and mechanical stress, ensuring reliability in harsh conditions.

No. of Elements: 2

Two elements allow for higher current handling and better thermal management, enhancing the overall performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 1200 V

This high maximum repetitive peak reverse voltage ensures that the diode can cope with significant voltage spikes, protecting sensitive circuit components.

Maximum Non-Repetitive Peak Forward Current: 140 A

The capacity to handle a non-repetitive peak forward current of 140 A enables the diode to manage brief surges effectively, providing reliability and stability in transient scenarios.

Diode Element Material: SILICON CARBIDE

Silicon carbide as the diode element material offers superior thermal conductivity and efficiency, resulting in enhanced performance in high-power applications.

Technical Specifications

Diodes & Rectifiers STPSC40H12CWY attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE POWER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

120 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC40H12CWY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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