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STPSC2H065BY-TR

STMicroelectronics

STPSC2H065BY-TR by STMicroelectronics

STPSC2H065BY-TR from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max reverse voltage of 650 V, forward current of 2 A, and operates b/w -40 °C to 175 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Sensible Micro Corp

USA . 6,731 parts In-Stock

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Vyrian

USA . 5,428 parts In-Stock

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5,428

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Anansix

USA . 900 parts In-Stock

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900

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Digiode

USA . 651 parts In-Stock

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651

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IDEA Electronic Components Group

UK . 1,206 parts In-Stock

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$0.154

100+ parts

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$0.138

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1,206

$0.154

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$0.138

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MKK Technologies

India . 356 parts In-Stock

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$0.289

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356

$0.289

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DigiPath Technology Company

USA . 356 parts In-Stock

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$0.289

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356

$0.289

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Microchip USA

USA . 5,974 parts In-Stock

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$5.418

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$5.418

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AZTECH Wire

Italy . 975 parts In-Stock

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$20.930

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QUARKTWIN TECHNOLOGY LTD

USA . 14,715 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Corphita

USA . 1,157 parts In-Stock

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Parana Technologies

USA . 440 parts In-Stock

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$0.184

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$0.184

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Overview

Unlock superior efficiency and reliability with the STPSC2H065BY-TR Schottky rectifier diode from STMicroelectronics, a leader in semiconductor innovation. Designed for power applications, this compact surface mount component excels in extreme conditions, boasting impressive thermal performance and low reverse current. Elevate your designs with enhanced durability and reduced energy waste, ensuring peak performance in automotive and industrial systems. Experience the unbeatable quality and value that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy helps in ensuring durability and resistance to environmental factors, making the diode suitable for various applications.

Config: SINGLE

A single configuration simplifies the design and integration of the diode into circuits, offering ease of use and installation.

Surface Mount: YES

Surface mount capability allows for flexible PCB design and enables compact layouts, which are essential in modern electronics.

Maximum Reverse Current: 20 uA

A low reverse current contributes to higher efficiency and lower power losses during operation, which is critical in high-performance applications.

Package Shape: RECTANGULAR

The rectangular shape provides optimal space utilization on PCBs, facilitating easier assembly and efficient use of board space.

Reverse Test Voltage: 650 V

This high reverse test voltage indicates strong performance under high-stress conditions, ensuring reliability in demanding applications.

No. of Terminals: 2

The dual terminal configuration simplifies connectivity, making it straightforward to integrate into existing electrical systems.

Package Style (Meter): SMALL OUTLINE

The small outline package contributes to a compact design, allowing for use in space-constrained environments.

Application: POWER

Designed for power applications, this diode is robust enough to handle significant currents and voltages, making it suitable for various high-power circuits.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature signifies the diode's ability to perform in extreme environments, enhancing reliability in challenging thermal conditions.

Minimum Operating Temperature: -40 °C

The wide operating temperature range ensures functionality in harsh conditions, catering to a diverse range of applications.

Terminal Position: SINGLE

A single terminal position allows for simple connections in the circuit, streamlining the manufacturing and integration processes.

Case Connection: CATHODE

Cathode connection simplifies design arrangements in circuits, providing intuitive design choices for engineers.

Reference Standard: AEC-Q101

Complying with this automotive standard ensures high quality and reliability, crucial for automotive and stringent applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.55 V

The low forward voltage drop translates into greater efficiency and reduced heating, maximizing the performance of the circuit.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode can handle substantial power loads, making it suitable for various applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds, which improves overall circuit performance, especially in high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form ensures ease of soldering, resulting in improved manufacturability and reliability in connections.

Maximum Repetitive Peak Reverse Voltage: 650 V

This high voltage capacity makes the diode optimal for applications needing frequent high voltage exposure without failure.

Maximum Non Repetitive Peak Forward Current: 18 A

A high non-repetitive peak forward current means the diode can handle short surges, ensuring robustness in dynamic electrical environments.

Diode Element Material: SILICON CARBIDE

The use of silicon carbide enhances thermal conductivity and electric performance, resulting in improved efficiency and longevity of the diode.

Technical Specifications

Diodes & Rectifiers STPSC2H065BY-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.55 V

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

18 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

20 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC2H065BY-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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